参数资料
型号: DS1610
厂商: DALLAS SEMICONDUCTOR
元件分类: 微控制器/微处理器
英文描述: Partitioned NV Controller(分割式非易失性控制器)
中文描述: SPECIALTY MICROPROCESSOR CIRCUIT, PDIP16
封装: 0.300 INCH, DIP-16
文件页数: 8/10页
文件大小: 85K
代理商: DS1610
DS1610
022598 8/10
NOTES:
1. All voltages are reference to ground
2. Only one battery input is required.
3. Measured with outputs open circuited.
4. I
CC01
is the maximum average load which the DS1610 can supply to the memories.
5. Z
CE
is an average input-to-output impedance as the input is swept from ground to V
CCI
and less than 4 mA is
forced through Z
CE
.
6. I
CC02
is the maximum average load current which the DS1610 can supply to the memories in the battery
backup mode.
7. t
CE
max must be met to insure data integrity on power loss.
8. Chip Enable Output CEO can only sustain leakage current in the battery mode.
9. Applies only when loading partition switch.
10.Measured with a load as shown in Figure 1.
11. Measured with DIS at a logic high level.
12.CEO and WEO will be held high for a time equal to t
REC
(max = 125 msec) after V
CCI
crosses V
CCTP
.
13.t
R
is the slew rate of V
CCI
from 4.25V to 4.75V.
14.CEI, WEI, A
W
- A
Z
run at minimum timing set and at voltage levels of 0V to 3V.
15.All inputs within 0.3V of ground or V
CCI
and CEI within 0.3V of V
CCI
.
16.The power fail output signal (PFO) is driven active (V
OL
= 0.4V) when the V
CC
trip point occurs. While active,
the PFO pin can sink 4 mA and will maintain a maximum output voltage of 0.4 volts. When inactive, the volt-
age output of PFO is 2.4 volts minimum and will source a current of 1 mA.
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