参数资料
型号: DS1841X
厂商: Maxim Integrated Products
文件页数: 12/17页
文件大小: 0K
描述: IC RES LOG NV I2C DGTL 10TDFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1
接片: 128
电阻(欧姆): 22k
电路数: 1
温度系数: 标准值 ±250 ppm/°C
存储器类型: 非易失
接口: I²C,2 线串口
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 100°C
安装类型: 表面贴装
封装/外壳: 模具
供应商设备封装: 模具
包装: 管件
DS1841
Temperature-Controlled, NV, I2C,
Logarithmic Resistor
4
_______________________________________________________________________________________
Note 1: All voltages are referenced to ground. Currents entering the IC are specified positive and currents exiting the IC are
negative.
Note 2:ICC is specified with the following conditions: SCL and SDA = VCC, RW and RH floating with Update Mode bit = 1.
Note 3: This is the minimum VCC voltage that causes NV memory to be recalled.
Note 4: This is the time from VCC > VPOR until initial memory recall is complete.
Note 5: Guaranteed by design.
Note 6: I2C interface timing shown is for Fast-Mode (400kHz) operation. This device is also backward-compatible with I2C-
Standard Mode timing.
Note 7: CB—total capacitance of one bus line in picofarads.
Note 8: EEPROM write time begins after a STOP condition occurs.
Note 9: Guaranteed by characterization.
I2C AC ELECTRICAL CHARACTERISTICS (See Figure 3) (continued)
(VCC = +2.7V to +5.5V, TA = -40°C to +100°C, timing referenced to VIL(MAX) and VIH(MIN).)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Write Time
tW
(Note 8)
10
20
ms
A0, A1 Setup Time
tSU:A
Before START
0.6
μs
A0, A1 Hold Time
tHD:A
After STOP
0.6
μs
Input Capacitance on
A0, A1, SDA, or SCL
CI
5
10
pF
Startup Time
tST
2
ms
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = +2.7V to +5.5V)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Write Cycles
TA = +85°C
50,000
Writes
EEPROM Write Cycles
TA = +25°C (Note 9)
200,000
Writes
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