- 您现在的位置：买卖IC网 > PDF目录299011 > DS1855B-050 Dual Nonvolatile Digital Potentiometer and Secure Memory PDF资料下载
参数资料
| 型号： | DS1855B-050 |
| 元件分类： | 数字电位计 |
| 英文描述： | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| 中文描述： | 双非易失数字电位器及安全存储器 |
| 文件页数： | 15/20页 |
| 文件大小： | 252K |
| 代理商： | DS1855B-050 |
DS1855
4 of 20
MEMORY ORGANIZATION
The DS1855’s serial EEPROM is internally organized with 256 words of 1 byte each. Each word requires
an 8-bit address for random word addressing. The byte at address F9h determines the wiper setting for
potentiometer 0, which contains 100 positions. Writing values above 63h to this address sets the wiper to
its uppermost position, but the MSB is ignored. The byte at address F8h determines the wiper setting for
potentiometer 1, which contains 256 positions (00h to FFh). Address locations FAh though FFh are
reserved and should not be written.
MEMORY
LOCATION
NAME OF
MEMORY
LOCATION
FUNCTION OF MEMORY LOCATION
00h – F7h
User Memory
General-purpose user memory.
F8h
Potentiometer 1 Setting Writing to this byte controls the setting of potentiometer 1, a 256-
position pot. Valid settings are 00h to FFh.
F9h
Potentiometer 0 Setting Writing to this byte controls the setting of potentiometer 0, a 100-
position pot. Valid settings are 00h to 63h. MSB is ignored.
FAh
Software Lock
Configuration Byte
The three lower bits in this byte can be used to set write-protection
to the 256-byte memory block.
B2: Writing this bit to a 1 protects the upper page of memory. If
this bit is set, memory locations F8h to FFh are configured for
write-protection.
B1: Writing this bit to a 1 protects the upper block of memory. If
this bit is set, memory locations 80h to F7h are configured for
write-protection. The upper page must be unlocked in order to
modify the locking of this portion of memory.
B0: Writing this bit to a 1 protects the lower block of memory. If
this bit is set, memory locations 00h to 7Fh are configured for
write-protection. The upper page must be unlocked in order to
modify the locking of this portion of memory.
B2 B1 B0
相关PDF资料 |
PDF描述 |
|---|---|
| DS1855B-100 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-010 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-020 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-050 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-100 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1855B-050+ | 功能描述:数字电位计 IC Dual NV w/Memory RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| DS1855B-100 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855B-100+ | 功能描述:数字电位计 IC Dual NV w/Memory RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| DS1855E-010 | 功能描述:数字电位计 IC RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| DS1855E-010/R | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
发布紧急采购，3分钟左右您将得到回复。