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参数资料
| 型号： | DS1855B-050 |
| 元件分类： | 数字电位计 |
| 英文描述： | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| 中文描述： | 双非易失数字电位器及安全存储器 |
| 文件页数： | 7/20页 |
| 文件大小： | 252K |
| 代理商： | DS1855B-050 |
DS1855
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NOTES:
1. All voltages are referenced to ground.
2. ISTBY specified with for VCC = 3.0V and 5.0V, and control port logic pins are driven to the appropriate
logic levels. Appropriate logic levels specify that logic inputs are within a 0.5V of ground or VCC for
the corresponding inactive state.
3. I/O pins of fast-mode devices must not obstruct the SDA and SCL lines if VCC is switched off.
4. A fast mode-device can be used in a standard mode system, but the requirement t
SU:DAT > 250ns must
then be met. This will automatically be the case if the device does not stretch the LOW period of the
SCL signal. If such a device does stretch the LOW period of the SCL signal, it must output the next
data bit to the SDA line tRMAX + tSU:DAT = 1000 + 250 = 1250ns before the SCL line is released.
5. After this period, the first clock pulse is generated.
6. The maximum t
HD:DAT has only to be met if the device does not stretch the LOW period (tLOW) of the
SCL signal.
7. CB – Total capacitance of one bus line in picofarads, timing referenced to (0.9)(V
CC) and (0.1)(VCC).
8. EEPROM write begins after a STOP condition occurs.
9. Absolute linearity is used to measure expected wiper voltage as determined by wiper position.
10. Relative linearity is used to determine the change of wiper voltage between two adjacent wiper
positions.
11. ICC specified with SDA pin open.
12. Maximum ICC is dependent on clock rates.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1855B-100 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-010 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-020 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-050 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-100 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1855B-050+ | 功能描述:数字电位计 IC Dual NV w/Memory RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| DS1855B-100 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855B-100+ | 功能描述:数字电位计 IC Dual NV w/Memory RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| DS1855E-010 | 功能描述:数字电位计 IC RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| DS1855E-010/R | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
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