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| 型号： | DS1870E-010+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 26/28页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR RF POWER AMP 16TSSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 96 |
| RF 型： | 手机 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-TSSOP |
| 包装： | 管件 |
| 产品目录页面： | 1431 (CN2011-ZH PDF) |
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LDMOS RF Power-Amplifier Bias
Controller
dition, and write the slave address byte (R/ W = 0) and
the first memory address of the next memory row
before continuing to write data.
Acknowledge polling: Any time an EEPROM page is
written, the DS1870 requires the EEPROM write time
(t W ) after the stop condition to write the contents of the
page to EEPROM. During the EEPROM write time, the
DS1870 will not acknowledge its slave address
because it is busy. It is possible to take advantage of
that phenomenon by repeatedly addressing the
DS1870, which allows the next page to be written as
soon as the DS1870 is ready to receive the data. The
alternative to acknowledge polling is to wait for maxi-
mum period of t W to elapse before attempting to write
again to the DS1870.
EEPROM write cycles: When EEPROM writes occur,
the DS1870 writes the whole EEPROM memory page,
even if only a single byte on the page was modified.
Writes that do not modify all 8 bytes on the page are
allowed and do not corrupt the remaining bytes of
memory on the same page. Because the whole page is
written, bytes on the page that were not modified dur-
ing the transaction are still subject to a write cycle. This
can result in a whole page being worn out over time by
writing a single byte repeatedly. Writing a page one
COMMUNICATIONS KEY
byte at a time wears the EEPROM out eight times faster
than writing the entire page at once. The DS1870’s
EEPROM write cycles are specified in the Nonvolatile
Memory Characteristics table. The specification shown
is at the worst-case temperature. It can handle approxi-
mately 10x that many writes at room temperature.
Writing to SRAM-shadowed EEPROM memory with SEE
= 1 does not count as an EEPROM write cycle when
evaluating the EEPROM’s estimated lifetime.
Reading a single byte from a slave: Unlike the write
operation that uses the memory address byte to define
where the data is to be written, the read operation occurs
at the present value of the memory address counter. To
read a single byte from the slave, the master generates a
start condition, writes the slave address byte with
R/ W = 1, reads the data byte with a NACK to indicate the
end of the transfer, and generates a stop condition.
Manipulating the address counter for reads: A dummy
write cycle can be used to force the address counter to
a particular value. To do this, the master generates a
start condition, writes the slave address byte (R/ W = 0),
writes the memory address where it desires to read, gen-
erates a repeated start condition, writes the slave
address byte (R/ W = 1), reads data with ACK or NACK
as applicable, and generates a stop condition.
S
P
START
STOP
A
N
ACK
NOT
ACK
WHITE BOXES INDICATE THE MASTER IS
CONTROLLING SDA
SHADED BOXES INDICATE THE SLAVE IS
CONTROLLING SDA
NOTES:
1) ALL BYTES ARE SENT MOST SIGNIFICANT BIT FIRST.
2) THE FIRST BYTE SENT AFTER A START
CONDITION IS ALWAYS THE SLAVE ADDRESS,
FOLLOWED BY THE READ/WRITE BIT.
Sr
REPEATED
START
X X
X X
X X
X X
8 BITS ADDRESS OR DATA
WRITE A SINGLE BYTE
S
1
0
1
0 A 2 A 1 A 0 0
A
MEMORY ADDRESS
A
DATA
A
P
WRITE UP TO AN 8-BYTE PAGE WITH A SINGLE TRANSACTION
S
1
0
1
0 A 2 A 1 A 0 0
A
MEMORY ADDRESS
A
DATA
A
DATA
A
P
READ A SINGLE BYTE WITH A DUMMY WRITE CYCLE TO MOVE THE ADDRESS COUNTER
S
1
0
1
0 A 2 A 1 A 0 0
A
MEMORY ADDRESS
A
Sr
1 0
1
0 A 2 A 1 A 0 1
A
DATA
N
P
READ MULTIPLE BYTES WITH A DUMMY WRITE CYCLE TO MOVE THE ADDRESS COUNTER
S
1
0
1
0 A 2 A 1 A 0 0
A
MEMORY ADDRESS
A
Sr
1 0
1
0 A 2 A 1 A 0 1
A
DATA
A
DATA
A
DATA
A
DATA
N
P
Figure 5. I 2 C Communications Examples
26
____________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1870E-010+ | 功能描述:特殊用途放大器 LDMOS RF Power-Amp Bias Controller RoHS:否 制造商:Texas Instruments 通道数量:Single 共模抑制比（最小值）: 输入补偿电压: 工作电源电压:3 V to 5.5 V 电源电流:5 mA 最大功率耗散: 最大工作温度:+ 70 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-20 封装:Reel |
| DS1870E-010+T&R | 制造商:Maxim Integrated Products 功能描述:LDMOS RF PWR-AMP BIAS CNTRLR 16TSSOP - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC RF PWR CNTRL PA 16TSSOP |
| DS1870E-010+T&R | 功能描述:特殊用途放大器 LDMOS RF Power-Amp Bias Controller RoHS:否 制造商:Texas Instruments 通道数量:Single 共模抑制比（最小值）: 输入补偿电压: 工作电源电压:3 V to 5.5 V 电源电流:5 mA 最大功率耗散: 最大工作温度:+ 70 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-20 封装:Reel |
| DS1870K | 制造商:Maxim Integrated Products 功能描述:DS1870 EVALUATION KIT - Bulk |
| DS1873 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:SFP+ Controller with Analog LDD Interface |
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