参数资料
型号: DS1977-F5#
厂商: Maxim Integrated
文件页数: 20/29页
文件大小: 0K
描述: IBUTTON EEPROM 32KBit F5
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
RoHS指令信息: IButton RoHS Compliance Plan
标准包装: 14
系列: iButton®
存储容量: 32KB
存储器类型: EEPROM
产品目录页面: 1431 (CN2011-ZH PDF)
DS1977
Figure 10. INITIALIZATION PROCEDURE “RESET AND PRESENCE PULSES”
After the bus master has released the line it goes into receive mode (RX). Now the 1-Wire bus is pulled to V PUP via
the pullup resistor or, in case of a DS2480B driver, by active circuitry. When the threshold V TH is crossed, the
DS1977 waits for t PDH and then transmits a Presence Pulse by pulling the line low for t PDL . To detect a presence
pulse, the master must test the logical state of the 1-Wire line at t MSP .
The t RSTH window must be at least the sum of t PDHMAX , t PDLMAX , and t RECMIN . Immediately after t RSTH is expired, the
DS1977 is ready for data communication. In a mixed population network t RSTH should be extended to minimum
480μs at standard speed and 48μs at Overdrive speed to accommodate other 1-Wire devices.
READ/WRITE-TIME SLOTS
Data communication with the DS1977 takes place in time slots, which carry a single bit each. Write-time slots
transport data from bus master to slave. Read-time slots transfer data from slave to master. The definitions of the
write and read-time slots are illustrated in Figure 11.
All communication begins with the master pulling the data line low. As the voltage on the 1-Wire line falls below the
threshold V TL , the DS1977 starts its internal timing generator that determines when the data line will be sampled
during a write-time slot and how long data will be valid during a read-time slot.
MASTER-TO-SLAVE
For a write-one time slot, the voltage on the data line must have crossed the V THMAX threshold after the write-one
low time t W1LMAX is expired. For a write-zero time slot, the voltage on the data line must stay below the V THMIN
threshold until the write-zero low time t W0LMIN is expired. For most reliable communication the voltage on the data
line should not exceed V ILMAX during the entire t W0L window. After the V THMAX threshold has been crossed, the
DS1977 needs a recovery time t REC before it is ready for the next time slot .
Figure 11. READ/WRITE TIMING DIAGRAM
Write-One Time Slot
V PUP
V IHMASTER
V TH
V TL
V ILMAX
t W1L
0V
t F
RESISTOR
ε
MASTER
20 of 29
t SLOT
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DS1977-F5# 功能描述:iButton Password-Protected 32KB EEPROM iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1977-F5+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1981U-F3-1125+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1981U-F3-114C+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1981U-F5-1124+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated