参数资料
型号: DS1977-F5#
厂商: Maxim Integrated
文件页数: 21/29页
文件大小: 0K
描述: IBUTTON EEPROM 32KBit F5
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
RoHS指令信息: IButton RoHS Compliance Plan
标准包装: 14
系列: iButton®
存储容量: 32KB
存储器类型: EEPROM
产品目录页面: 1431 (CN2011-ZH PDF)
DS1977
Figure 11. READ/WRITE TIMING DIAGRAM (continued)
Write-Zero Time Slot
V PUP
V IHMASTER
V TH
V TL
V ILMAX
t W0L
0V
t F
t SLOT
ε
t REC
RESISTOR
MASTER
Read-Data Time Slot
SLAVE-TO-MASTER
A read-data time slot begins like a write-one time slot. The voltage on the data line must remain below V TLMIN until
the read low time t RL is expired. During the t RL window, when responding with a 0, the DS1977 will start pulling the
data line low; its internal timing generator determines when this pulldown ends and the voltage starts rising again.
When responding with a 1, the DS1977 will not hold the data line low at all, and the voltage starts rising as soon as
t RL is over.
The sum of t RL + δ (rise rime) on one side and the internal timing generator of the DS1977 on the other side define
the master sampling window (t MSRMIN to t MSRMAX ) in which the master must perform a read from the data line. For
most reliable communication, t RL should be as short as permissible and the master should read close to but no later
than t MSRMAX . After reading from the data line, the master must wait until t SLOT is expired. This guarantees sufficient
recovery time t REC for the DS1977 to get ready for the next time slot.
IMPROVED NETWORK BEHAVIOR
1-Wire networks can only be terminated during transients controlled by the bus master (1-Wire driver) and are
therefore susceptible to noise of various origins. Depending on the physical size and topology of the network,
reflections from end points and branch points can add up or cancel each other to some extent. Such reflections are
visible as glitches or ringing on the 1-Wire communication line. A glitch during the rising edge of a time slot can
cause a slave device to lose synchronization with the master and, as a consequence, result in a search ROM
command coming to a dead end. For better performance in network applications, the DS1977 uses a new 1-Wire
front end, which makes it less sensitive to noise and also reduces the magnitude of noise injected by the slave
device itself.
The 1-Wire front end of the DS1977 differs from traditional slave devices in four characteristics.
1) The falling edge of the presence pulse has a controlled slew rate. This provides a better match to the line
impedance than a digitally switched transistor, converting the high frequency ringing known from traditional
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相关代理商/技术参数
参数描述
DS1977-F5# 功能描述:iButton Password-Protected 32KB EEPROM iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1977-F5+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1981U-F3-1125+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1981U-F3-114C+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1981U-F5-1124+ 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated