参数资料
型号: DS2045Y-100#
厂商: Maxim Integrated
文件页数: 11/12页
文件大小: 0K
描述: IC NVSRAM 1MBIT 100NS 256BGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: NVSRAM(非易失 SRAM)
存储容量: 1M (128K x 8)
速度: 100ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 256-BBGA
供应商设备封装: 256-BGA(27x27)
包装: 托盘
DS2045Y/AB Single-Piece 1Mb
Nonvolatile SRAM
Recommended Reflow Temperature Profile
Applications Information
PROFILE FEATURE
Average ramp-up rate
(T L to T P )
Preheat
- Temperature min (T Smin )
- Temperature max (T Smax )
- Time (min to max) (ts)
T Smax to T L
- Ramp-up rate
Time maintained above:
- Temperature (T L )
- Time (t L )
Peak temperature (T P )
Time within 5 ° C of actual peak
temperature (T P )
Ramp-down rate
Time 25 ° C to peak temperature
Sn-Pb EUTECTIC
ASSEMBLY
3 ° C/second max
100 ° C
150 ° C
60 to 120 seconds
183 ° C
60 to 150 seconds
225 +0/-5 ° C
10 to 30 seconds
6 ° C/second max
6 minutes max
Power-Supply Decoupling
To achieve the best results when using the DS2045,
decouple the power supply with a 0.1μF capacitor. Use
a high-quality, ceramic surface-mount capacitor if pos-
sible. Surface-mount components minimize lead induc-
tance, which improves performance, while ceramic
capacitors have adequately high frequency response
for decoupling applications.
Using the Open-Drain RST Output
The RST output is open drain, and therefore requires a
pullup resistor to realize a high logic output level. Pullup
resistor values between 1k ? and 10k ? are typical.
Battery Charging/Lifetime
The DS2045 charges an ML battery to maximum
capacity in approximately 96 hours of operation when
V CC is greater than V TP . Once the battery is charged,
its lifetime depends primarily on the V CC duty cycle.
The DS2045 can maintain data from a single, initial
charge for up to 3 years. Once recharged, this deep-
discharge cycle can be repeated up to 20 times, pro-
ducing a worst-case service life of 60 years. More
Note: All temperatures refer to top side of the package, mea-
sured on the package body surface.
typical duty cycles are of shorter duration, enabling the
DS2045 to be charged hundreds of times, therefore
extending the service life well beyond 60 years.
Recommended Cleaning Procedures
The DS2045 may be cleaned using aqueous-based
cleaning solutions. No special precautions are needed
when cleaning boards containing a DS2045 module.
Removal of the topside label violates the environmen-
tal integrity of the package and voids the warranty of
the product.
____________________________________________________________________
11
相关PDF资料
PDF描述
R0.25D12-2415/HP CONV DC/DC 0.25W 24VIN +/-15VOUT
T86D475K050EBAS CAP TANT 4.7UF 50V 10% 2917
R0.25D12-2412/HP CONV DC/DC 0.25W 24VIN +/-12VOUT
RGM40DRSH CONN EDGECARD 80POS DIP .156 SLD
TPCR226K006R1500 CAP TANT 22UF 6.3V 10% 0805
相关代理商/技术参数
参数描述
DS2045Y-100# 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS2045Y20# 制造商:Maxim Integrated Products 功能描述:
DS2045Y-70 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS2045Y-70# 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS205 功能描述:烙铁 Weller Inline Filter For DS1201ESD/1203A RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included