参数资料
| 型号： | DS2431Q+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 4/27页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT 6TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K（256 x 4） |
| 接口： | 1 线 串行 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-TDFN 裸露焊盘（3x3） |
| 包装： | 带卷 (TR) |
第1页第2页第3页当前第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页
DS2431
1024-Bit, 1-Wire EEPROM
Note 19: Current drawn from IO during the EEPROM programming interval. The pullup circuit on IO during the programming interval
should be such that the voltage at IO is greater than or equal to V PUPMIN . If V PUP in the system is close to V PUPMIN , a low-
impedance bypass of R PUP , which can be activated during programming, may need to be added.
Note 20: Interval begins t REHMAX after the trailing rising edge on IO for the last time slot of the E/S byte for a valid Copy Scratchpad
sequence. Interval ends once the device’s self-timed EEPROM programming cycle is complete and the current drawn by
the device has returned from I PROG to I L .
Note 21: t PROG for units branded version “A1” is 12.5ms. t PROG for units branded version “A2” and later is 10ms.
Note 22: Write-cycle endurance is degraded as T A increases.
Note 23: Not 100% production tested; guaranteed by reliability monitor sampling.
Note 24: Data retention is degraded as T A increases.
Note 25: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the
data sheet limit at operating temperature range is established by reliability testing.
Note 26: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated tem-
peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.
COMPARISON TABLE
LEGACY VALUES
DS2431 VALUES
PARAMETER
STANDARD SPEED
(μs)
OVERDRIVE SPEED
(μs)
STANDARD SPEED
(μs)
OVERDRIVE SPEED
(μs)
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
t SLOT (including t REC )
t RSTL
t PDH
t PDL
t W0L
61
480
15
60
60
(undefined)
(undefined)
60
240
120
7
48
2
8
6
(undefined)
80
6
24
16
65*
480
15
60
60
(undefined)
640
60
240
120
8*
48
2
8
6
(undefined)
80
6
24
15.5
*Intentional change; longer recovery time requirement due to modified 1-Wire front-end.
Note: Numbers in bold are not in compliance with legacy 1-Wire product standards.
4
Maxim Integrated
相关PDF资料 |
PDF描述 |
|---|---|
| DS2431P+T&R | IC EEPROM 1KBIT 6TSOC |
| DS2431+T&R | IC EEPROM 1KBIT TO92-3 |
| FT24C128A-UMR-B | IC EEPROM 128KBIT 1MHZ 8MSOP |
| FT24C128A-UDR-B | IC EEPROM 128KBIT 1MHZ 8DIP |
| FT24C128A-UTG-B | IC EEPROM 128KBIT 1MHZ 8TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2431QU | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM |
| DS2431X | 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS2431X+ | 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS2431X+S | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM |
| DS2431X+U | 功能描述:电可擦除可编程只读存储器 1024-BIT 1-WIRE 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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