参数资料
型号: DS2784G+T&R
厂商: Maxim Integrated Products
文件页数: 23/43页
文件大小: 0K
描述: IC FUEL GAUGE STND-ALONE 14-TDFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
功能: 燃料,电量检测计/监控器
电池化学: 锂离子(Li-Ion)、锂聚合物(Li-Pol)
电源电压: 2.5 V ~ 4.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-WFDFN 裸露焊盘
供应商设备封装: 14-TDFN-EP(3x5)
包装: 带卷 (TR)
DS2784: 1-Cell Stand-Alone Fuel Gauge IC with Li+ Protector and SHA-1 Authentication
Table 6. Example Cell Characterization Table (Normalized to +40°C)
Manufacturer’s Rated Cell Capacity: 1000mA h
Charge Voltage: 4.2V
Active Empty (V): 3.0V
Sense Resistor: 0.020 ?
Termination Current: 50mA
Active Empty (I): 300mA
Segment
Breakpoints
TBP12
-12 ° C
TBP23
0 ° C
TBP34
18 ° C
Full
Active Empty
Standby Empty
+40 ° C
Nominal
(mAh)
1051
Seg. 1
ppm/ ° C
3601
2380
1404
Seg. 2
ppm/ ° C
3113
1099
427
Seg. 3
ppm/ ° C
1163
671
244
Seg. 4
ppm/ ° C
854
305
183
Figure 5. Lookup Function Diagram
CELL MODEL
PARAMETERS
LOOKUP
FULL(T)
*
(EEPROM)
TEMPERATURE
FUNCTION
AE(T)
SE(T)
*
*
See Result Registers section for a description of these registers.
*
APPLICATION PARAMETERS
In addition to cell model characteristics, several application parameters are needed to detect the full and empty
points, as well as calculate results in mAh units.
Sense Resistor Prime (R SNSP [1/ ? ]) —R SNSP stores the value of the sense resistor for use in computing the absolute
capacity results. The resistance is stored as a 1-byte conductance value with units of mhos (1/ ?) . R SNSP supports
resistor values of 1 ? to 3.922m ? . R SNS is located in the parameter EEPROM block.
R SNSP = 1/R SNS (units of mhos; 1/ ? )
Charge Voltage (VCHG) —VCHG stores the charge voltage threshold used to detect a fully charged state. The
voltage is stored as a 1-byte value with units of 19.5mV and can range from 0V to 4.978V. VCHG should be set
marginally less than the cell voltage at the end of the charge cycle to ensure reliable charge termination detection.
VCHG is located in the parameter EEPROM block.
Minimum Charge Current (IMIN) —IMIN stores the charge current threshold used to detect a fully charged state. It
is stored as a 1-byte value with units of 50 μ V (IMIN x R SNS ) and can range from 0 to 12.75mV. Assuming R SNS =
20m ? , IMIN can be programmed from 0mA to 637.5mA in 2.5mA steps. IMIN should be set marginally greater than
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