参数资料
型号: DS2784G+T&R
厂商: Maxim Integrated Products
文件页数: 4/43页
文件大小: 0K
描述: IC FUEL GAUGE STND-ALONE 14-TDFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
功能: 燃料,电量检测计/监控器
电池化学: 锂离子(Li-Ion)、锂聚合物(Li-Pol)
电源电压: 2.5 V ~ 4.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-WFDFN 裸露焊盘
供应商设备封装: 14-TDFN-EP(3x5)
包装: 带卷 (TR)
DS2784: 1-Cell Stand-Alone Fuel Gauge IC with Li+ Protector and SHA-1 Authentication
EEPROM RELIABILITY SPECIFICATION
(V DD = 2.5V to 4.6V, T A = -20 ° C to +70 ° C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Copy Time
t EEC
10
ms
EEPROM Copy Endurance
N EEC
T A = +50°C
50,000
cycles
ELECTRICAL CHARACTERISTICS: 1-Wire Interface, Standard
(V DD = 2.5V to 4.6V, T A = -20 ° C to +70 ° C, unless otherwise noted.)
PARAMETER
Time Slot
SYMBOL
t SLOT
CONDITIONS
MIN
60
TYP
MAX
120
UNITS
μ s
Recovery Time
t REC
1
μ s
Write-0 Low Time
Write-1 Low Time
t LOW0
t LOW1
60
1
120
15
μ s
μ s
Read-Data Valid
Reset-Time High
t RDV
t RSTH
480
15
μ s
μ s
Reset-Time Low
Presence-Detect High
Presence-Detect Low
t RSTL
t PDH
t PDL
480
15
60
960
60
240
μ s
μ s
μ s
ELECTRICAL CHARACTERISTICS: 1-Wire Interface, Overdrive
(V DD = 2.5V to 4.6V, T A = -20 ° C to +70 ° C.)
PARAMETER
Time Slot
SYMBOL
t SLOT
CONDITIONS
MIN
6
TYP
MAX
16
UNITS
μ s
Recovery Time
t REC
1
μ s
Write-0 Low Time
Write-1 Low Time
t LOW0
t LOW1
6
1
16
2
μ s
μ s
Read-Data Valid
Reset-Time High
t RDV
t RSTH
48
2
μ s
μ s
Reset-Time Low
Presence-Detect High
Presence-Detect Low
t RSTL
t PDH
t PDL
48
2
8
80
6
24
μ s
μ s
μ s
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
All voltages are referenced to V SS .
Factory-calibrated accuracy. Higher accuracy can be achieved by in-system calibration by the user.
Accumulation bias and offset bias registers set to 00h. NBEN bit set to 0.
Parameters guaranteed by design.
CP pin externally driven to 10V.
Overvoltage and undervoltage delays (t OVD , t UVD ) are reduced to 0s if the OV or UV condition is detected within 100ms of entering
Active mode.
t UVD MIN determined by stepping the voltage on V IN from V UV + 250mV to V UV - 250mV.
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