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| 型号： | DS3065W-100# |
| 厂商： | Maxim Integrated |
| 文件页数： | 17/18页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 8MBIT 100NS 256BGA |
| 标准包装： | 18 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 8M（1M x 8） |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-BBGA |
| 供应商设备封装： | 256-BGA（27x27） |
| 包装： | 托盘 |
3.3V Single-Piece 8Mb Nonvolatile SRAM
with Clock
sible. Surface-mount components minimize lead induc-
tance, which improves performance, and ceramic
capacitors tend to have adequate high-frequency
Recommended Reflow Temperature
Profile
response for decoupling applications.
Avoiding Data Bus Contention
Care should be taken to avoid simultaneous access of
the SRAM and RTC devices (see Figure 4). Any chip-
enable overlap violates t CCS and can result in invalid
and unpredictable behavior.
Using the Open-Drain IRQ /FT
and RST Outputs
The IRQ /FT and RST outputs are open drain, and there-
fore require pullup resistors to realize a high logic out-
put level. Pullup resistor values between 1k ? and 10k ?
are typical.
Battery Charging/Lifetime
The DS3065W charges an ML battery to maximum
capacity in approximately 96 hours of operation when
V CC is greater than V TP . Once the battery is charged,
its lifetime depends primarily on the V CC duty cycle.
The DS3065W can maintain data from a single, initial
charge for up to 2 years. Once recharged, this deep-
discharge cycle can be repeated for up to 20 times,
PROFILE FEATURE
Average ramp-up rate
(T L to T P )
Preheat
- Temperature min (T Smin )
- Temperature max (T Smax )
- Time (min to max) (ts)
T Smax to T L
- Ramp-up rate
Time maintained above:
- Temperature (T L )
- Time (t L )
Peak temperature (T P )
Time within 5 ° C of actual peak
temperature (T P )
Ramp-down rate
Time 25 ° C to peak temperature
Sn-Pb EUTECTIC
ASSEMBLY
3 ° C/second max
100 ° C
150 ° C
60 to 120 seconds
183 ° C
60 to 150 seconds
225 +0/-5 ° C
10 to 30 seconds
6 ° C/second max
6 minutes max
producing a worst-case service life of 40 years. More
typical duty cycles are of shorter duration, enabling the
DS3065W to be charged hundreds of times, and
extending the service life well beyond 40 years.
Recommended Cleaning
Procedures
The DS3065W can be cleaned using aqueous-based
cleaning solutions. No special precautions are needed
when cleaning boards containing a DS3065W module.
Removal of the topside label violates the environmental
integrity of the package and voids the warranty of the
product.
V IH
Note: All temperatures refer to topside of the package, mea-
sured on the package body surface.
V IH
CE
CS
Figure 4. SRAM/RTC Data Bus Control
t CCS
V IH
V IH
t CCS
____________________________________________________________________
17
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS3065W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS3065W-100#W | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS3065WP | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:3.3V, 8Mb, Nonvolatile SRAM with Clock |
| DS3065WP-100IND+ | 功能描述:NVRAM 1.2-5.5V 15kV ESD Pro 8Ch Level RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS307 | 功能描述:插线板 DESIGN STRIP KIT RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
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