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| 型号： | DS3065WP-100IND+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 12/15页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 3.3V 8MB 34POWERCAP MOD |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 40 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 8M（1M x 8） |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 34-PowerCap? 模块 |
| 供应商设备封装： | 34-PowerCap 模块 |
| 包装： | 托盘 |
| 其它名称： | 90-3065W+P1I |
DS3065WP
3.3V, 8Mb, Nonvolatile SRAM with Clock
V TP
V CC
ABE, AE
AF
Figure 1. Battery-Backup Mode Alarm Waveforms
When the RTC register values match alarm register set-
tings, the alarm flag (AF) is set to 1.
The AE and ABE bits are reset to 0 during the power-up
transition, but an alarm generated during power-up sets
AF to 1. Therefore, the AF bit can be read after system
power-up to determine if an alarm was generated during
the power-up sequence. Figure 1 illustrates alarm timing
during battery-backup mode and power-up states.
Clock Accuracy
The DS3065WP and DS9034I-PCX+ are each individually
tested for accuracy. Once mounted together, the module
typically keeps time accuracy to within Q 1.53 minutes
per month (35ppm) at +25 N C and does not require
additional calibration. For this reason, methods of field
clock calibration are not available and not necessary.
The electrical environment also affects clock accuracy,
and caution should be taken to place the component in
the lowest level EMI section of the PCB layout. For addi-
tional information, refer to Application Note 58: Crystal
Considerations with Dallas Real-Time Clocks (RTCs) .
Power-On Default States
Upon each application of power to the device, the fol-
lowing register bits are automatically set to 0: WDS = 0,
BMB[4:0] = 0, RB0 = 0, RB1 = 0, AE = 0, ABE = 0. All
other RTC bits are undefined.
12
Data-Retention Mode
The device provides full functional capability for V CC
greater than 3.0V and write protects by 2.8V. Data is
maintained in the absence of V CC without additional sup-
port circuitry. The NV SRAM constantly monitors V CC .
Should the supply voltage decay, the NV SRAM auto-
matically write protects itself. All inputs become don’t
care, and all data outputs become high impedance. As
V CC falls below approximately 2.5V (V SW ), the power-
switching circuit connects the lithium energy source to
the clock and SRAM to maintain time and retain data.
During power-up, when V CC rises above V SW , the pow-
er-switching circuit connects external V CC to the clock
and SRAM and disconnects the lithium energy source.
Normal clock or SRAM operation can resume after V CC
exceeds V TP for a minimum duration of t REC .
Freshness Seal
When the DS9034I-PCX+ battery cap is first attached to
a DS3065WP base, the RTC oscillator is disabled and
the lithium battery is electrically disconnected, guaran-
teeing that no battery capacity has been consumed dur-
ing transit or storage.
When V CC is first applied at a level greater than V TP ,
the lithium battery is enabled for backup operation. The
user is required to enable the oscillator (MSB of the
SECONDS register) and initialize the required RTC reg-
isters for proper timekeeping operation.
Maxim Integrated
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| DS3065WP-100IND+ | 功能描述:NVRAM 1.2-5.5V 15kV ESD Pro 8Ch Level RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS307 | 功能描述:插线板 DESIGN STRIP KIT RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
| DS3070W | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock |
| DS3070W-100 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock |
| DS3070W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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