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参数资料
| 型号： | DS3503U+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 8/13页 |
| 文件大小： | 0K |
| 描述： | IC POT DGTL NV 128TAP 10-MSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 3,000 |
| 接片： | 128 |
| 电阻（欧姆）： | 5k |
| 电路数： | 2 |
| 温度系数： | 标准值 4 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | I²C（设备位址） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-µMAX |
| 包装： | 带卷 (TR) |
DS3503
NV, I2C, Stepper Potentiometer
4
_______________________________________________________________________________________
Note 1:
All voltages are referenced to ground. Currents entering the IC are specified positive and currents exiting the IC are negative.
Note 2:
ISTBY is specified with SDA = SCL = VCC and resistor pins floating.
Note 3:
ICC is specified with the following conditions: SCL = 400kHz, SDA pulled up, and RL, RW, RH, and Y floating.
Note 4:
This is the minimum VCC voltage that causes NV memory to be recalled.
Note 5:
This is the time from VCC > VPOR until initial memory recall is complete.
Note 6:
Integral nonlinearity is the deviation of a measured resistor setting value from the expected values at each particular resis-
tor setting. Expected value is calculated by connecting a straight line from the measured minimum setting to the measured
maximum setting. INL = [V(RW)i - (V(RW)0]/LSB(ideal) - i, for i = 0...127.
Note 7:
Differential nonlinearity is the deviation of the step-size change between two LSB settings from the expected step size. The
expected LSB step size is the slope of the straight line from measured minimum position to measured maximum position.
DNL = [V(RW)i+1 - (V(RW)i]/LSB(ideal) - 1, for i = 0...126.
Note 8:
ZSERROR = code 0 wiper voltage divided by one LSB (ideal).
Note 9:
FSERROR = (code 127 wiper voltage - V+) divided by one LSB (ideal).
Note 10: I2C interface timing shown is for fast-mode (400kHz) operation. This device is also backward-compatible with I2C stan-
dard mode timing.
Note 11: CB—total capacitance of one bus line in picofarads.
Note 12: EEPROM write time begins after a STOP condition occurs.
Note 13: Pulses narrower than max are suppressed.
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = +2.7V to +3.6V, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Write Cycles
TA = +70°C
30,000
Writes
SUPPLY CURRENT vs. SUPPLY VOLTAGE
DS3503
toc01
SUPPLY VOLTAGE (V)
SUPPLY
CURRENT
(μ
A)
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
1
2
3
4
5
0
2.7
3.6
SDA = SCL = VCC, V+ = 15V, SYNC = GND
RW, RH, RL, AND Y ARE FLOATING
SUPPLY CURRENT vs. TEMPERATURE
DS3503
toc02
TEMPERATURE (
°C)
SUPPLY
CURRENT
(μ
A)
80
60
40
20
0
-20
2
3
4
5
1
-40
100
SDA = SCL = VCC = 3.3V, V+ = 15V, SYNC = GND
RW, RH, RL, AND Y ARE FLOATING
SUPPLY CURRENT vs. SCL FREQUENCY
DS3503
toc03
SCL FREQUENCY (kHz)
SUPPLY
CURRENT
(μ
A)
350
300
250
200
150
100
50
2
4
6
8
10
12
14
0
400
SDA = VCC = 3.6V, V+ = 15V
SYNC = GND, SCL = 3.6VP-P
RW, RH, RL, AND Y ARE FLOATING
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
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相关代理商/技术参数 |
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|---|---|
| DS3504FP000 | 制造商:Thomas & Betts 功能描述:30A,PLG,3P4W,MG,404,000,3P480V,FC |
| DS3504FP00K | 制造商:Thomas & Betts 功能描述:30A,CON,3P4W,MG,504,00K,3P480V,FC |
| DS3504FP00K/JG63 | 制造商:Thomas & Betts 功能描述:30A,CON,3P4W,504,00K,3P480V,FC,JG63 |
| DS3504FP00K/JG64 | 制造商:Thomas & Betts 功能描述:30A,CON,3P4W,MG,504,3P480V,JG64 |
| DS3504FP00K/JG66 | 制造商:Thomas & Betts 功能描述:30A,CON,3P4W,MG,504,3P480V,JG66 |
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