参数资料
型号: DS3905U-020
厂商: Maxim Integrated Products
文件页数: 6/11页
文件大小: 0K
描述: IC POT NV TRIPLE 128POS 10-USOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 50
接片: 128
电阻(欧姆): 20k
电路数: 3
温度系数: 标准值 123 ppm/°C
存储器类型: 非易失
接口: I²C(设备位址)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-µMAX
包装: 管件
DS3904/DS3905
Triple 128-Position Nonvolatile Digital
Variable Resistor/Switch
4
______________________________________________________________________
Note 1:
All voltages are referenced to ground.
Note 2:
Applies to A0, SDA, SCL for the DS3904 and A0, A1, A2, SDA, SCL for the DS3905. Also applies to H0, H1,
H2 for both DS3904 and DS3905 when in the high-impedance state.
Note 3:
ISTBY specified with SDA = SCL = VCC and A0 = GND.
Note 4:
Absolute linearity is used to determine expected resistance. Absolute linearity is defined as the deviation
from the straight line drawn from the value of the resistance at position 00h to the value of the resistance at
position 7Fh.
Note 5:
Relative linearity is used to determine the change of resistance between two adjacent resistor positions.
Note 6:
Temperature coefficient specifies the change in resistance as a function of temperature. The temperature
coefficient varies with resistor position. Limits are guaranteed by design.
Note 7:
A fast-mode device can be used in a standard-mode system, but the requirement tSU:DAT > 250ns must
then be met. This is automatically the case if the device does not stretch the LOW period of the SCL signal.
If such a device does stretch the LOW period of the SCL signal, it must output the next data bit to the SDA
line tRMAX + tSU:DAT = 1000ns + 250ns =1250ns before the SCL line is released.
Note 8:
After this period, the first clock pulse is generated.
Note 9:
The maximum tHD:DAT has only to be met if the device does not stretch the LOW period (tLOW) of the SCL
signal.
Note 10:
CB—total capacitance of one bus line in picofarads, timing referenced to 0.9 x VCC and 0.1 x VCC.
Note 11:
EEPROM write begins after a stop condition occurs.
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = +2.7V to +5.5V, TA = +70°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Writes
50,000
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