参数资料
型号: DS5002FMN-16
厂商: Maxim Integrated Products
文件页数: 16/25页
文件大小: 0K
描述: IC MPU SECURE 16MHZ IND 80-TQFP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 66
系列: DS500x
核心处理器: 8051
芯体尺寸: 8-位
速度: 16MHz
连通性: EBI/EMI,SIO,UART/USART
外围设备: 电源故障复位,WDT
输入/输出数: 32
程序存储器类型: SRAM
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 4.5 V ~ 5.5 V
振荡器型: 外部
工作温度: -40°C ~ 85°C
封装/外壳: 80-BQFP
包装: 托盘
DS5002FP Secure Microprocessor Chip
23 of 25
Figure 14. Connection to 64k x 8 SRAM
POWER MANAGEMENT
The DS5002FP monitors VCC to provide power-fail reset, early warning power-fail interrupt, and switchover to
lithium backup. It uses an internal bandgap reference in determining the switch points. These are called VPFW,
VCCMIN, and VLI respectively. When VCC drops below VPFW, the DS5002FP will perform an interrupt vector to location
2Bh if the power-fail warning was enabled. Full processor operation continues regardless. When power falls further
to VCCMIN, the DS5002FP invokes a reset state. No further code execution is performed unless power rises back
above VCCMIN. All decoded chip enables and the R/W signal go to an inactive (logic 1) state. VCC is still the power
source at this time. When VCC drops further to below VLI, internal circuitry switch to the lithium cell for power. The
majority of internal circuits will be disabled and the remaining nonvolatile states will be retained. Any devices
connected VCCO will be powered by the lithium cell at this time. VCCO is at the lithium battery voltage minus
approximately 0.45V (less a diode drop). This drop varies depending on the load. Low-power SRAMs should be
used for this reason. When using the DS5002FP, the user must select the appropriate battery to match the RAM
data retention current and the desired backup lifetime. Note that the lithium cell is only loaded when VCC < VLI. The
Secure Microcontroller User’s Guide has more information on this topic. The trip points VCCMIN and VPFW are listed
in the electrical specifications.
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