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参数资料
| 型号： | DS89C450-ENL+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 16/46页 |
| 文件大小： | 0K |
| 描述： | IC MCU FLASH 64KB 33MHZ 44-TQFP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 160 |
| 系列： | 89C |
| 核心处理器： | 8051 |
| 芯体尺寸： | 8-位 |
| 速度： | 33MHz |
| 连通性： | EBI/EMI，SIO，UART/USART |
| 外围设备： | 电源故障复位，WDT |
| 输入/输出数： | 32 |
| 程序存储器容量： | 64KB（64K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 1K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 4.5 V ~ 5.5 V |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-TQFP |
| 包装： | 托盘 |
| 产品目录页面： | 703 (CN2011-ZH PDF) |
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DS89C430/DS89C450 Ultra-High-Speed Flash Microcontrollers
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The signature bytes can be read in ROM loader mode or in parallel programming mode. Reading data from
addresses 30h, 31h, and 60h provides signature information on manufacturer, part, and extension as follows:
ADDRESS
VALUE
MEANING
30h
DAh
Manufacturer ID
31h
43h
DS89C430 Device ID
31h
44h
DS89C440 Device ID (Contact factory or replace with DS89C430 or DS89C450.)
31h
45h
DS89C450 Device ID
60h
01h
Device Extension
Note: The read/write accessibility of the flash memory during in-application programming is not affected by the state of the lock
bits. However, the lock bits do affect the read/write accessibility in ROM loader and parallel programming modes.
In-Application Programming by User Software
The DS89C430 supports in-application programming of on-chip flash memory by user software. In-application
programming is initiated by writing a flash command into the flash control (FCNTL:D5h) register to enable the flash
memory for erase/program/verify operations. Address and data are input into the MMU through the flash data
(FDATA:D6h) register. The flash command also enables read/write accesses to the FDATA. The MMU’s sequencer
provides the operation sequences and control functions to the flash memory. The MMU is designed to operate
independently from the processor, except for read/write access to the SFRs.
Only the upper bank of the on-chip program memory can be in-application programmed by the user software. The
lower bank of the on-chip program memory contains system hardware-dependent codes that are crucial to system
operation and should not be altered during in-application programming.
All flash operations are self-timed. The user software can monitor the progress of an erase or programming
operation through the flash busy (FBUSY;FCNTL.7) bit with a reset value at logic 1. A selected operation
automatically starts when required data is written to the FDATA SFR. The MMU clears the FBUSY bit to indicate
the start of a write/erase operation. The FBUSY bit may not change state for up to 1s after the operation is
requested. During this time, the application should poll the status of the FBUSY bit waiting for it to change state.
This bit is held low until either the end of the operation or until an error indicator is returned. A flash operating
failure terminates the current operation and sets the flash error flag (FERR;FCNTL.6) to logic 1. Both the busy and
error flags are read-only bits.
Read/write access during in-application programming is not affected by the state of the lock bits.
A sample programming sequence for a "write upper program memory bank" is shown below. The command must be
reentered each time an operation is requested, i.e., it is not permissible to issue the “write upper program memory
bank” command once and then repeatedly load address and data values to program a block of memory.
1. Make sure the FBUSY bit is 1 to indicate flash MMU is idle.
2. Write 0Bh to the FCNTL register using the timed access sequence.
3. Write address_MSB to the FDATA register.
4. Write address_LSB to the FDATA register.
5. Write data_value to the FDATA register.
6. Make sure the FBUSY bit is 0 to indicate programming has started.
7. Wait for FBUSY bit to return to 1 to indicate end of programming operation.
8. Make sure FERR is 0 to indicate no programming error.
The flash command (FC3–FC0;FCNTL.3:0) bits provide flash commands as listed in Table 4.
相关PDF资料 |
PDF描述 |
|---|---|
| VE-B43-IW-F3 | CONVERTER MOD DC/DC 24V 100W |
| DS89C450-MNL+ | IC MCU FLASH 64KB 33MHZ 40-DIP |
| VE-B43-IW-F2 | CONVERTER MOD DC/DC 24V 100W |
| DS89C450-QNL+ | IC MCU FLASH 64KB 33MHZ 44-PLCC |
| VE-B43-IW-F1 | CONVERTER MOD DC/DC 24V 100W |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS89C450-ENL+ | 功能描述:8位微控制器 -MCU Ultra-High-Speed Flash MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| DS89C450-K00 | 功能描述:开发板和工具包 - 8051 RoHS:否 制造商:Silicon Labs 产品:Development Kits 工具用于评估:C8051F960, Si7005 核心: 接口类型:USB 工作电源电压: |
| DS89C450-KIT# | 功能描述:开发板和工具包 - 8051 Ultra-High-Speed Flash MCU RoHS:否 制造商:Silicon Labs 产品:Development Kits 工具用于评估:C8051F960, Si7005 核心: 接口类型:USB 工作电源电压: |
| DS89C450-MNG | 功能描述:8位微控制器 -MCU Ultra-High-Speed Flash MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| DS89C450-MNG+ | 功能描述:8位微控制器 -MCU Ultra-High-Speed Flash MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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