参数资料
型号: DSEC120-12AK
厂商: IXYS
文件页数: 1/2页
文件大小: 54K
描述: DIODE UFAST 1200V 60A CC TO264A
标准包装: 24
系列: HiPerFRED™
电压 - 在 If 时为正向 (Vf)(最大): 2.66V @ 60A
电流 - 在 Vr 时反向漏电: 650µA @ 1200V
电流 - 平均整流 (Io)(每个二极管): 60A
电压 - (Vr)(最大): 1200V(1.2kV)
反向恢复时间(trr): 40ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔,径向
封装/外壳: TO-264-3,TO-264AA
供应商设备封装: TO-264A
包装: 管件
? 2004 IXYS All rights reserved
1 - 2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 120-12AK
403
IFAV
VRRM
= 1200 V
trr
= 40 ns
= 2x60 A
VRSM
VRRM
Type
V V
1200 1200
DSEC 120-12AK
HiPerFREDTM
Epitaxial Diode
with soft recovery
Features
International standard package
 Planar passivated chips
 Very short recovery time
 Extremely low switching losses
 Low IRM-values
 Soft recovery behaviour
 Epoxy meets UL 94V-0
Applications
 Antiparallel diode for high frequency
switching devices
 Antisaturation diode
 Snubber diode
 Free wheeling diode in converters
and motor control circuits
 Rectifiers in switch mode power
supplies (SMPS)
 Inductive heating
 Uninterruptible power supplies (UPS)
 Ultrasonic cleaners and welders
Advantages
 Avalanche voltage rated for reliable
operation
 Soft reverse recovery for low EMI/RFI
 Low IRM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
70 A
TC
= 90°C; rectangular, d = 0.5 60 A
IFSM
TVJ
= 45°C; t
p
= 10 ms (50 Hz), sine 500 A
EAS
TVJ
= 25°C; non-repetitive 23 mJ
IAS
= 14.5 A; L = 180 μH
IAR
VA
= 1.5
·VR typ.; f = 10 kHz; repetitive 1.5 A
TVJ
TVJM
Tstg
-55...+175 °C
175 °C
-55...+150 °C
Ptot
TC
= 25°C 230 W
Md
mounting torque M3/M3.5
0.8...1.2 Nm
Weight
typical 6 g
Symbol
Conditions
Characteristic Values
typ.
max.
IR
VR
VR
= VRRM;TVJ
= 25°C 650 μA
= VRRM;TVJ
= 150°C 2.5 mA
VF
IF
= 60 A; T
VJ
= 150°C
TVJ
= 25°C
1.74 V
2.66 V
RthJC
RthCH
0.65 K/W
0.25 K/W
trr
IF
= 1 A; -di/dt = 300 A/μs; 40 ns
VR
= 30 V; T
VJ
= 25°C
IRM
VR
= 100 V; I
F
= 130 A; 7
-diF/dt = 100 A/μs; TVJ
= 100°C
14.3 A
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
μs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
AC ATO-264 A
A = Anode, C = Cathode, TAB = Cathode
A
C
A
TAB
Preliminary data
相关PDF资料
PDF描述
DSEC16-04AS DIODE ULT FAST 400V 10A TO-263AB
DSEC16-06AC DIODE ARRAY 600V 10A ISOPLUS220
DSEC16-06A DIODE ULT FAST 600V 10A TO-220AB
DSEC16-12A DIODE UFAST 1200V 10A TO-220AB
DSEC29-02A DIODE UFAST 200V 15A TO-220AB
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