参数资料
型号: DSEI2X31-12B
厂商: IXYS
文件页数: 1/2页
文件大小: 0K
描述: DIODE FRED 1200V 28A SOT-227B
标准包装: 10
电压 - 在 If 时为正向 (Vf)(最大): 2.55V @ 30A
电流 - 在 Vr 时反向漏电: 750µA @ 1200V
电流 - 平均整流 (Io)(每个二极管): 28A
电压 - (Vr)(最大): 1200V(1.2kV)
反向恢复时间(trr): 60ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 2 个独立式
安装类型: 底座安装
封装/外壳: SOT-227-4,miniBLOC
供应商设备封装: SOT-227B
包装: 管件
Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x 30
DSEI 2x 31
I FAVM = 2x 28 A
V RRM = 1200 V
t rr
= 40 ns
V RSM
V
1200
Symbol
V RRM
V
1200
Type
DSEI 2x 30-12B
Test Conditions
DSEI 2x 31-12B
DSEI 2x 30
DSEI 2x 31
Maximum Ratings (per diode)
miniBLOC, SOT-227 B
E72873
International standard package
I FRMS
I FAVM x
I FRM
T VJ = T VJM
T C = 50 ° C; rectangular, d = 0.5
t P < 10 m s; rep. rating, pulse width limited by T VJM
70
28
375
A
A
A
Features
q
I FSM
T VJ = 45 ° C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
210
A
A
q
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
T VJ = 150 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
185
195
A
A
q
q
q
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
I 2 t
T VJ = 45 ° C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
180
A 2 s
A 2 s
q
q
Extremely low switching losses
Low I RM -values
A s
T VJ = 150 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
170
160
2
A 2 s
q
Soft recovery behaviour
Antiparallel diode for high frequency
Anti saturation diode
T VJ
T VJM
T stg
P tot
T C = 25 ° C
-40...+150
150
-40...+150
100
° C
° C
° C
W
Applications
q
switching devices
q
V ISOL
M d
Weight
50/60 Hz, RMS
I ISOL £ 1 mA
Mounting torque
Terminal connection torque (M4)
2500
1.5/13
1.5/13
30
V~
Nm/lb.in.
Nm/lb.in.
g
q
q
q
q
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Symbol
Test Conditions
Characteristic Values (per diode)
typ. max.
q
q
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
I R
V F
T VJ = 25 ° C
T VJ = 25 ° C
T VJ = 125 ° C
I F = 30 A;
V R = V RRM
V R = 0.8 ? V RRM
V R = 0.8 ? V RRM
T VJ = 150 ° C
T VJ = 25 ° C
0.75
0.25
7
2.2
2.55
mA
mA
mA
V
V
Advantages
q
q
protection circuits
V T0
r T
R thJC
R thCK
t rr
I RM
For power-loss calculations only
T VJ = T VJM
I F = 1 A; -di/dt = 100 A/ m s; V R = 30 V; T VJ = 25 ° C
V R = 540 V; I F = 30 A; -di F /dt = 240 A/ m s
L £ 0.05 m H; T VJ = 100 ° C
0.05
40
16
1.65
18.2
1.25
60
18
V
m W
K/W
K/W
ns
A
q
q
q
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
x I FAVM rating includes reverse blocking losses at T VJM , V R = 0.8 V RRM , duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
1-2
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DSEI2X31-12P DIODE FRED 1200V 28A ECO-PAC1
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