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参数资料
| 型号： | DSPIC30F2010-20I/MM |
| 厂商： | Microchip Technology |
| 文件页数： | 13/66页 |
| 文件大小： | 0K |
| 描述： | IC DSPIC MCU/DSP 12K 28QFN |
| 产品培训模块： | dsPIC30F Quadrature Encoder Interface Serial Communications using dsPIC30F I2C Serial Communications using dsPIC30F SPI Serial Communications using dsPIC30F UART dsPIC30F 12 bit ADC - Part 2 dsPIC30F Addressing Modes - Part 1 dsPIC30F Architecture - Part 1 dsPIC30F DSP Engine & ALU dsPIC30F Interrupts dsPIC30F Motor Control PWM dsPIC Timers Asynchronous Stimulus dsPIC30F Addressing Modes - Part 2 dsPIC30F Architecture - Part 2 dsPIC30F 12-bit ADC Part 1 |
| 标准包装： | 61 |
| 系列： | dsPIC™ 30F |
| 核心处理器： | dsPIC |
| 芯体尺寸： | 16-位 |
| 速度： | 20 MIPS |
| 连通性： | I²C，SPI，UART/USART |
| 外围设备： | 高级欠压探测/复位，电机控制 PWM，QEI，POR，PWM，WDT |
| 输入/输出数： | 20 |
| 程序存储器容量： | 12KB（4K x 24） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 1K x 8 |
| RAM 容量： | 512 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.5 V ~ 5.5 V |
| 数据转换器： | A/D 6x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-VQFN 裸露焊盘 |
| 包装： | 管件 |
| 配用： | AC164322-ND - MODULE SOCKET MPLAB PM3 28/44QFN |
| 其它名称： | DSPIC30F2010-20I/MMG DSPIC30F201020IMM DSPIC30F201020IMM-ND |
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dsPIC30F Flash Programming Specification
DS70102K-page 20
2010 Microchip Technology Inc.
6.0
OTHER PROGRAMMING
FEATURES
6.1
Erasing Memory
Memory is erased by using an ERASEB, ERASED or
ERASEP command, as detailed in Section 8.5
“Command Descriptions”. Code memory can be
erased by row using ERASEP. Data EEPROM can be
erased by row using ERASED. When memory is erased,
the affected memory locations are set to ‘1’s.
ERASEB provides several Bulk Erase options.
Performing a Chip Erase with the ERASEB command
clears all code memory, data EEPROM and code
protection registers. Alternatively, ERASEB can be used
to selectively erase either all code memory or data
EEPROM. Erase options are summarized in Table 6-1.
TABLE 6-1:
ERASE OPTIONS
Command
Affected Region
ERASEB
Entire chip(1) or all code memory or all
data EEPROM, or erase by segment
ERASED
Specified rows of data EEPROM
ERASEP(2)
Specified rows of code memory
Note 1: The system operation Configuration
registers and device ID registers are not
erasable.
2: ERASEP cannot be used to erase code-
protect Configuration bits. These bits must
be erased using ERASEB.
6.2
Modifying Memory
Instead
of
bulk-erasing
the
device
before
programming, it is possible that you may want to modify
only a section of an already programmed device. In this
situation, Chip Erase is not a realistic option.
Instead, you can erase selective rows of code memory
and data EEPROM using ERASEP and ERASED,
respectively. You can then reprogram the modified
rows with the PROGP and PROGD command pairs. In
these cases, when code memory is programmed,
single-panel programming must be specified in the
PROGP command.
For modification of Advanced Code Protection bits for
a particular segment, the entire chip must first be
erased with the ERASEB command. Alternatively, on
devices that support Advanced Security, individual
segments (code and/or data EEPROM) may be
erased, by suitably changing the MS (Memory Select)
field in the ERASEB command. The code-protect
Configuration bits can then be reprogrammed using the
PROGC command.
Note:
If read or write code protection is enabled
for a segment, no modifications can be
made to that segment until code
protection is disabled. Code protection
can only be disabled by performing a Chip
Erase or by performing a Segment Erase
operation for the required segment.
6.3
Reading Memory
The READD command reads the data EEPROM,
Configuration bits and device ID of the device. This
command only returns 16-bit data and operates on
16-bit registers. READD can be used to return the
entire contents of data EEPROM.
The READP command reads the code memory of the
device. This command only returns 24-bit data packed
as described in Section 8.3 “Packed Data Format”.
READP can be used to read up to 32K instruction words
of code memory.
Note:
Reading an unimplemented memory
location
causes
the
programming
executive to reset. All READD and READP
commands must specify only valid
memory locations.
6.4
Programming Executive Software
Version
At times, it may be necessary to determine the version
of programming executive stored in executive memory.
The QVER command performs this function. See
Section 8.5.11 “QVER Command” for more details
about this command.
6.5
Data EEPROM Information in the
Hexadecimal File
To allow portability of code, the programmer must read
the data EEPROM information from the hexadecimal
file. If data EEPROM information is not present, a
simple warning message should be issued by the
programmer. Similarly, when saving a hexadecimal file,
all data EEPROM information must be included. An
option to not include the data EEPROM information can
be provided.
Microchip Technology Inc. believes that this feature is
important for the benefit of the end customer.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DSPIC30F2010-20ISP | 功能描述:数字信号处理器和控制器 - DSP, DSC RoHS:否 制造商:Microchip Technology 核心:dsPIC 数据总线宽度:16 bit 程序存储器大小:16 KB 数据 RAM 大小:2 KB 最大时钟频率:40 MHz 可编程输入/输出端数量:35 定时器数量:3 设备每秒兆指令数:50 MIPs 工作电源电压:3.3 V 最大工作温度:+ 85 C 封装 / 箱体:TQFP-44 安装风格:SMD/SMT |
| DSPIC30F2010-30I | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:High-Performance, 16-bit Digital Signal Controllers |
| dsPIC30F2010-30I/MM | 功能描述:数字信号处理器和控制器 - DSP, DSC 16B MCU DSP 28LD 20MIPS 12KB FLASH RoHS:否 制造商:Microchip Technology 核心:dsPIC 数据总线宽度:16 bit 程序存储器大小:16 KB 数据 RAM 大小:2 KB 最大时钟频率:40 MHz 可编程输入/输出端数量:35 定时器数量:3 设备每秒兆指令数:50 MIPs 工作电源电压:3.3 V 最大工作温度:+ 85 C 封装 / 箱体:TQFP-44 安装风格:SMD/SMT |
| DSPIC30F2010-30I/MMG | 功能描述:数字信号处理器和控制器 - DSP, DSC 16bit Signal Cntrlr Lead Free Package RoHS:否 制造商:Microchip Technology 核心:dsPIC 数据总线宽度:16 bit 程序存储器大小:16 KB 数据 RAM 大小:2 KB 最大时钟频率:40 MHz 可编程输入/输出端数量:35 定时器数量:3 设备每秒兆指令数:50 MIPs 工作电源电压:3.3 V 最大工作温度:+ 85 C 封装 / 箱体:TQFP-44 安装风格:SMD/SMT |
| DSPIC30F2010-30I/SO | 功能描述:数字信号处理器和控制器 - DSP, DSC 20MHz 12KB Flash RoHS:否 制造商:Microchip Technology 核心:dsPIC 数据总线宽度:16 bit 程序存储器大小:16 KB 数据 RAM 大小:2 KB 最大时钟频率:40 MHz 可编程输入/输出端数量:35 定时器数量:3 设备每秒兆指令数:50 MIPs 工作电源电压:3.3 V 最大工作温度:+ 85 C 封装 / 箱体:TQFP-44 安装风格:SMD/SMT |
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