元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
IPB06N03LAT | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | 0 | |
IPB06N03LAT | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | 0 | |
BSS192PE6327T | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 | 0 | |
BSS192PE6327T | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 | 0 | |
BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 430MA SOT223 | 0 | |
BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 430MA SOT223 | 0 | |
BSP316PE6327T | Infineon Technologies | MOSFET P-CH 100V 680MA SOT223 | 0 | |
BSP316PE6327T | Infineon Technologies | MOSFET P-CH 100V 680MA SOT223 | 0 | |
BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | 0 | 1:$0.94000 10:$0.75500 100:$0.56620 1,000:$0.32504 |
BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | 0 | 1,000:$0.32504 5,000:$0.29358 10,000:$0.28834 |
BSP171PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
BSP171PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | 0 | |
BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | 0 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 25V |
电流 - 连续漏极(Id) @ 25° C: | 50A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 5.9 毫欧 @ 30A,10V |
Id 时的 Vgs(th)(最大): | 2V @ 40µA |
闸电荷(Qg) @ Vgs: | 22nC @ 5V |
输入电容 (Ciss) @ Vds: | 2653pF @ 15V |
功率 - 最大: | 83W |
安装类型: | 表面贴装 |
封装/外壳: | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
供应商设备封装: | PG-TO263-3 |
包装: | 剪切带 (CT) |