分离式半导体产品 SI4880DY-T1-GE3品牌、价格、PDF参数

SI4880DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4880DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC 0 2,500:$1.10700
SIB411DK-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V PPAK SC75-6L 0 3,000:$0.30450
SI7804DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1212-8 0 3,000:$0.30450
SI4493DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 10A 8SOIC 0 2,500:$1.10700
SI4401DY-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 8-SOIC 0 2,500:$1.09755
SIR882ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A POWERPAK 0 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIR882ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A POWERPAK 0 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIR882ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A POWERPAK 0 3,000:$1.09350
6,000:$1.05300
15,000:$1.01250
30,000:$0.99225
75,000:$0.97200
SIE882DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 25V POLARPAK 0 3,000:$1.09350
IRL640STRRPBF Vishay Siliconix MOSFET N-CH 200V 17A D2PAK 0 800:$1.09305
SI4880DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: -
开态Rds(最大)@ Id, Vgs @ 25° C: 8.5 毫欧 @ 13A,10V
Id 时的 Vgs(th)(最大): 1.8V @ 250µA
闸电荷(Qg) @ Vgs: 25nC @ 5V
输入电容 (Ciss) @ Vds: -
功率 - 最大: -
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)