| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI4403BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 7.3A 8SOIC | 2,500 | 2,500:$0.36800 |
| SUD09P10-195-GE3 | Vishay Siliconix | MOSFET P-CH 100V DPAK | 8,610 | 1:$0.95000 25:$0.75000 100:$0.67500 250:$0.58752 500:$0.52500 1,000:$0.41250 |
| SUD09P10-195-GE3 | Vishay Siliconix | MOSFET P-CH 100V DPAK | 8,610 | 1:$0.95000 25:$0.75000 100:$0.67500 250:$0.58752 500:$0.52500 1,000:$0.41250 |
| SUD09P10-195-GE3 | Vishay Siliconix | MOSFET P-CH 100V DPAK | 8,000 | 2,000:$0.35000 6,000:$0.33250 10,000:$0.31875 50,000:$0.30000 |
| SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 3,384 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 3,384 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
| SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,000 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 17 毫欧 @ 9.9A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 350µA |
| 闸电荷(Qg) @ Vgs: | 50nC @ 5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.35W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOICN |
| 包装: | 带卷 (TR) |