| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| STB45N65M5 | STMicroelectronics | MOSFET N CH 650V 35A D2PAK | 2,072 | 1:$7.61000 10:$6.84400 25:$6.22440 100:$5.63450 250:$5.16252 500:$4.72000 |
| STB45N65M5 | STMicroelectronics | MOSFET N CH 650V 35A D2PAK | 2,000 | 1,000:$3.98250 2,000:$3.83500 5,000:$3.68750 10,000:$3.62850 25,000:$3.54000 |
| STL18NM60N | STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | 3,000 | 1:$3.92000 10:$3.50900 25:$3.15520 100:$2.86960 250:$2.59760 500:$2.32560 1,000:$1.95840 |
| STB26NM60N | STMicroelectronics | MOSFET N-CH 600V 20A D2PAK | 1,000 | 1,000:$3.23400 2,000:$3.07230 5,000:$2.95680 10,000:$2.86440 25,000:$2.77200 |
| STL18NM60N | STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | 3,000 | 1:$3.92000 10:$3.50900 25:$3.15520 100:$2.86960 250:$2.59760 500:$2.32560 1,000:$1.95840 |
| STP18N55M5 | STMicroelectronics | MOSFET N-CH 550V 13A TO220AB | 915 | 1:$3.22000 10:$2.87500 25:$2.58760 100:$2.35750 250:$2.12752 500:$1.90900 1,000:$1.61000 2,500:$1.52950 5,000:$1.47200 |
| STL18NM60N | STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | 0 | 3,000:$1.80880 6,000:$1.74080 15,000:$1.68640 30,000:$1.63200 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 650V |
| 电流 - 连续漏极(Id) @ 25° C: | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 78 毫欧 @ 19.5A，10V |
| Id 时的 Vgs(th)（最大）: | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 91nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 3375pF @ 100V |
| 功率 - 最大: | 208W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装: | D²PAK |
| 包装: | 剪切带 (CT) |