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参数资料
| 型号： | ECH8660-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V 4.5A ECH8 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 59 毫欧 @ 2A，10V |
| 闸电荷(Qg) @ Vgs： | 4.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 240pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-ECH |
| 包装： | 带卷 (TR) |
Ordering number : ENA1358B
ECH8660
Power MOSFET
30V, 4.5A, 59m Ω , –30V, –4.5A, 59m Ω , Complementary Dual ECH8
Features
http://onsemi.com
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?
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The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Conditions
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (1200mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (1200mm 2 × 0.8mm)
N-channel
30
±20
4.5
30
1.3
1.5
P-channel
--30
±20
--4.5
--30
Unit
V
V
A
A
W
W
Channel Temperature
Storage Temperature
Tch
Tstg
150
--55 to +150
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
Top View
ECH8660-TL-H
Packing Type : TL
Marking
2.9
0.15
8
5
TF
0 to 0.02
TL
Lot No.
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8
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| ECH8661-TL-H | MOSFET N/P-CH 30V 7A ECH8 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ECH8661 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications |
| ECH8661-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ECH8662 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ECH8662_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ECH8662-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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