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参数资料
| 型号： | EDI88512C |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM) |
| 中文描述： | 512Kx8单片的SRAM（512Kx8的CMOS单片静态内存） |
| 文件页数： | 3/7页 |
| 文件大小： | 98K |
| 代理商： | EDI88512C |
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
EDI88512C
AC CHARACTERISTICS – READ CYCLE
(VCC = 5.0V, VSS = 0V, TA = 0
°C to +70°C)
Symbol
70ns
85ns
100ns
Parameter
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Units
Read Cycle Time
tAVAV
tRC
70
85
100
ns
Address Access Time
tAVQV
tAA
70
85
100
ns
Chip Enable Access Time
tELQV
tACS
70
85
100
ns
Chip Enable to Output in Low Z (1)
tELQX
tCLZ
10
ns
Chip Disable to Output in High Z (1)
tEHQZ
tCHZ
25
30
ns
Output Hold from Address Change
tAVQX
tOH
10
ns
Output Enable to Output Valid
tGLQV
tOE
35
45
50
ns
Output Enable to Output in Low Z (1)
tGLQX
tOLZ
55
5
ns
Output Disable to Output in High Z(1)
tGHQZ
tOHZ
025
0
30
030
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS – WRITE CYCLE
(VCC = 5.0V, VSS = 0V, TA = 0
°C to +70°C)
Symbol
70ns
85ns
100ns
Parameter
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Units
Write Cycle Time
tAVAV
tWC
70
85
100
ns
Chip Enable to End of Write
tELWH
tCW
60
70
80
ns
tELEH
tCW
60
70
80
ns
Address Setup Time
tAVWL
tAS
00
0
ns
tAVEL
tAS
00
0
ns
Address Valid to End of Write
tAVWH
tAW
65
70
80
ns
tAVEH
tAW
65
70
80
ns
Write Pulse Width
tWLWH
tWP
50
55
60
ns
tWLEH
tWP
50
55
60
ns
Write Recovery Time
tWHAX
tWR
00
0
ns
tEHAX
tWR
00
0
ns
Data Hold Time
tWHDX
tDH
00
0
ns
tEHDX
tDH
00
0
ns
Write to Output in High Z (1)
tWLQZ
tWHZ
0250
30
0
30
ns
Data to Write Time
tDVWH
tDW
40
ns
tDVEH
tDW
30
35
40
ns
Output Active from End of Write (1)
tWHQX
tWLZ
55
5
ns
1. This parameter is guaranteed by design but not tested.
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| EDI8C32512LPA20EC | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 20-HTSSOP T&R |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI88512C/LP-C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| EDI88512C/LP-N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| EDI88512C120CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk |
| EDI88512C120NB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk |
| EDI88512C70CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk |
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