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参数资料
| 型号： | EDI88512C |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM) |
| 中文描述： | 512Kx8单片的SRAM（512Kx8的CMOS单片静态内存） |
| 文件页数： | 4/7页 |
| 文件大小： | 98K |
| 代理商： | EDI88512C |
4
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
EDI88512C
ADDRESS
DATA I/O
READ CYCLE 1 (WE HIGH; OE, CS LOW)
tAVQX
tAVQV
tAVAV
DATA 2
ADDRESS 1
ADDRESS 2
DATA 1
ADDRESS
DATA OUT
READ CYCLE 2 (WE HIGH)
tAVQV
tELQV
tGLQV
tELQX
tGLQX
tAVAV
tEHQZ
tGHQZ
OE
CS
WS32K32-XHX
FIG. 2
TIMING WAVEFORM - READ CYCLE
FIG. 4
WRITE CYCLE - CS CONTROLLED
FIG. 3
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA IN
WRITE CYCLE 2, CS CONTROLLED
tAVEH
tELEH
tEHAX
tWLEH
tDVEH
tEHDX
tAVAV
DATA VALID
HIGH Z
WE
CS
DATA OUT
tAVEL
ADDRESS
DATA IN
WRITE CYCLE 1, WE CONTROLLED
tAVWH
tELWH
tWHAX
tWLWH
tDVWH
tWLQZ
tWHQX
tAVWL
tWHDX
tAVAV
DATA VALID
HIGH Z
WE
CS
DATA OUT
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PDF描述 |
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| EDI8C32512CA | 512Kx32 SRAM Module(低功耗CMOS，128Kx32静态RAM模块（存取时间15，17，20，25，35，45，55ns）) |
| EDI8C32512LPA20EC | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 20-HTSSOP T&R |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI88512C/LP-C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| EDI88512C/LP-N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| EDI88512C120CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk |
| EDI88512C120NB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk |
| EDI88512C70CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk |
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