参数资料
型号: EDI88512C
英文描述: 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM)
中文描述: 512Kx8单片的SRAM(512Kx8的CMOS单片静态内存)
文件页数: 5/7页
文件大小: 98K
代理商: EDI88512C
5
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
EDI88512C
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Low Power Version only
Data Retention Voltage
VDD
VDD = 2.0V
2
V
Data Retention Quiescent Current
ICCDR
CS
≥ VDD -0.2V
185
A
Chip Disable to Data Retention Time
TCDR
VIN
≥ VDD -0.2V
0
ns
Operation Recovery Time
TR
or VIN
≤ 0.2V
TAVAV
––
ns
DATA RETENTION CHARACTERISTICS (EDI88512LPA ONLY)
(TA = -55
°C to +125°C)
WS32K32-XHX
FIG. 5
DATA RETENTION - CS CONTROLLED
DATA RETENTION, CS CONTROLLED
Data Retention Mode
tR
Vcc
CS
tCDR
CS = VDD -0.2V
VDD
4.5V
相关PDF资料
PDF描述
EDI8C32128C 128Kx32 SRAM Module(低功耗CMOS,512Kx32静态RAM模块(存取时间15,17,20,25,35,45,55ns))
EDI8C32512CA 512Kx32 SRAM Module(低功耗CMOS,128Kx32静态RAM模块(存取时间15,17,20,25,35,45,55ns))
EDI8C32512LPA20EC Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 20-HTSSOP T&R
EDI8C32512LPA20EI Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP
EDI8C32512LPA20EM Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP T&R
相关代理商/技术参数
参数描述
EDI88512C/LP-C 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM
EDI88512C/LP-N 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM
EDI88512C120CB 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk
EDI88512C120NB 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk
EDI88512C70CB 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk