型号: | EDI88512C |
英文描述: | 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM) |
中文描述: | 512Kx8单片的SRAM(512Kx8的CMOS单片静态内存) |
文件页数: | 5/7页 |
文件大小: | 98K |
代理商: | EDI88512C |
相关PDF资料 |
PDF描述 |
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EDI8C32128C | 128Kx32 SRAM Module(低功耗CMOS,512Kx32静态RAM模块(存取时间15,17,20,25,35,45,55ns)) |
EDI8C32512CA | 512Kx32 SRAM Module(低功耗CMOS,128Kx32静态RAM模块(存取时间15,17,20,25,35,45,55ns)) |
EDI8C32512LPA20EC | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 20-HTSSOP T&R |
EDI8C32512LPA20EI | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP |
EDI8C32512LPA20EM | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP T&R |
相关代理商/技术参数 |
参数描述 |
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EDI88512C/LP-C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
EDI88512C/LP-N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
EDI88512C120CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk |
EDI88512C120NB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk |
EDI88512C70CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk |