参数资料
型号: EDI8F8512C
英文描述: 512Kx8 Static RAM CMOS, Module(512Kx8 CMOS静态RAM模块)
中文描述: 512Kx8静态RAM的CMOS模块(512Kx8的CMOS静态内存模块)
文件页数: 3/8页
文件大小: 214K
代理商: EDI8F8512C
EDI8F8512C
512Kx8 Static Ram
3
EDI8F8512C Rev. 12 7/97 ECO#9922
AC Characteristics Read Cycle
Symbol
20ns
25ns
35ns
Parameter
JEDEC
Alt.
Min Max
Min
Max
Min
Max
Units
Read Cycle 2 - W High
Read Cycle Time
TAVAV
TRC
20
25
35
ns
Address Access Time
TAVQV
TAA
20
25
35
ns
Chip Enable Access Time
TELQV
TACS
20
25
35
ns
Chip Enable to Output in Low Z (1)
TELQX
TCLZ
3
ns
Chip Disable to Output in High Z (1)
TEHQZ TCHZ
10
12
15
ns
Output Hold from Address Change
TAVQX
TOH
3
ns
Output Enable to Output Valid
TGLQV
TOE
13
15
20
ns
Output Enable to Output in Low Z (1)
TGLQX
TOLZ
0
ns
Output Disable to Output in High Z(1) TGHQZ TOHZ
8
10
12
ns
Note 1: Parameter guaranteed, but not tested.
TAVAV
TAVQV
TAVQX
DATA 2
A
Q
ADDRESS 1
ADDRESS 2
DATA 1
g
TGHQZ
TELQV
TELQX
E
G
Q
TEHQZ
A
TAVAV
TGLQV
TGLQX
TAVQV
Read Cycle 1 - W High, G, E Low
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