参数资料
型号: EDI8F8512C
英文描述: 512Kx8 Static RAM CMOS, Module(512Kx8 CMOS静态RAM模块)
中文描述: 512Kx8静态RAM的CMOS模块(512Kx8的CMOS静态内存模块)
文件页数: 5/8页
文件大小: 214K
代理商: EDI8F8512C
EDI8F8512C
512Kx8 Static Ram
5
EDI8F8512C Rev. 12 7/97 ECO#9922
Note 1: Parameter guaranteed, but not tested.
Write Cycle
Symbol
20ns
25ns
35ns
Parameter
JEDEC
Alt.
Min Max
Min
Max
Min
Max
Units
Write Cycle Time
TAVAV
TWC
20
25
35
ns
Chip Enable to End of Write
TELWH
TCW
15
20
30
ns
TELEH
TCW
15
20
30
ns
Address Setup Time
TAVWL
TAS
0
ns
TAVEL
TAS
0
ns
Address Valid to End of Write
TAVWH
TAW
15
20
30
ns
TAVEH
TAW
15
20
30
ns
Write Pulse Width
TWLWH
TWP
15
20
25
ns
TWLEH
TWP
15
20
25
ns
Write Recovery Time
TWHAX
TWR
0
ns
TEHAX
TWR
0
ns
Data Hold Time
TWHDX
TDH
3
ns
TEHDX
TDH
3
ns
Write to Output in High Z (1)
TWLQZ TWHZ
0 10
0
12
0
15
ns
Data to Write Time
TDVWH
TDW
12
15
20
ns
TDVEH
TDW
12
15
20
ns
Output Active from End of Write (1)
TWHQX TWLZ
3
ns
AC Characteristics Write Cycle
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