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| 型号： | EDS1232AABB-60L |
| 英文描述： | Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R |
| 中文描述： | 内存| 4X1MX32 |的CMOS | BGA封装| 90PIN |塑料 |
| 文件页数： | 29/55页 |
| 文件大小： | 570K |
| 代理商： | EDS1232AABB-60L |
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EDS1232AABB, EDS1232AATA
Data Sheet E0205E30 (Ver. 3.0)
35
Read command to Write command interval
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same
bank as the preceding read command, the write command can be performed after an interval of no less than 1
clock. However, DQM must be set High so that the output buffer becomes High-Z before data input.
CLK
Command
DQ (output)
in B2
in B3
READ
WRIT
in B0
in B1
High-Z
DQ (input)
CL=2
CL=3
DQM
BL = 4
Burst write
READ to WRITE Command Interval (1)
CLK
Command
DQ
READ
WRIT
CL=2
CL=3
DQM
2 clock
out
in
READ to WRITE Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be
executed; it is necessary to separate the two commands with a precharge command and a bank active
command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1
cycle, provided that the other bank is in the bank active state. However, DQM must be set High so that the
output buffer becomes High-Z before data input.
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PDF描述 |
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| EDS1232AABB-75 | Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R |
| EDS1232AABB-75L | SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EDS1232AABB-60L-E | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232AABB-75 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| EDS1232AABB-75-E | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232AABB-75L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| EDS1232AABB-75L-E | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:128M bits SDRAM |
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