- 您现在的位置：买卖IC网 > PDF目录97893 > EDS1232AABB-60L Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R PDF资料下载
参数资料
| 型号： | EDS1232AABB-60L |
| 英文描述： | Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R |
| 中文描述： | 内存| 4X1MX32 |的CMOS | BGA封装| 90PIN |塑料 |
| 文件页数： | 52/55页 |
| 文件大小： | 570K |
| 代理商： | EDS1232AABB-60L |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页当前第52页第53页第54页第55页
EDS1232AABB, EDS1232AATA
Data Sheet E0205E30 (Ver. 3.0)
6
DC Characteristics (TA = 0 to +70
°°°°C, VDD, VDDQ = 3.3V±±±±0.3V, VSS, VSSQ = 0V)
Parameter
/CAS latency
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current
(CL = 2)
IDD1
135
mA
1
(CL = 3)
IDD1
135
mA
Burst length = 1
tRC
≥ tRC (min.)
IO = 0mA
One bank active
Standby current in power down
IDD2P
1
mA
Standby current in power down
(input signal stable)
IDD2PS
1
mA
CKE
≤ VIL (max.) tCK = 15ns
CKE
≤ VIL (max.) tCK = ∞
Standby current in non power
down
IDD2N
20
mA
CKE
≥ VIH (min.) tCK = 15ns
CS
≥ VIH (min.)
Input signals are changed one
time during 30ns
Standby current in non power
down
(input signal stable)
IDD2NS
8
mA
CKE
≥ VIH (min.) tCK = ∞
Active standby current in power
down
IDD3P
5
mA
CKE
≤ VIL (max.) tCK = 15ns
Active standby current in power
down (input signal stable)
IDD3PS
4
mA
CKE
≤ VIL (max.), tCK = ∞
Active standby current in non
power down
IDD3N
45
mA
CKE
≥ VIH (min.), tCK = 15 ns,
/CS
≥ VIH (min.),
Input signals are changed one
time during 30ns.
Active standby current in non
power down
(input signal stable)
IDD3NS
28
mA
CKE
≥ VIH (min.), tCK = ∞,
Burst operating current
IDD4
-60
-75
200
180
mA
tCK
≥ tCK (min.),
IO = 0mA, All banks active
2
Refresh current
IDD5
280
mA
tRC
≥ tRC (min.)
3
Self refresh current
IDD6
2.0
mA
VIH
≥ VDD 0.2V,
VIL
≤ GND + 0.2V
Self refresh current
(L-version)
IDD6
-xxL
0.6
mA
Notes: 1. IDD1 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, IDD1 is measured condition that addresses are changed only one time during tCK (min.).
2. IDD4 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, IDD4 is measured condition that addresses are changed only one time during tCK
(min.).
3. IDD5 is measured on condition that addresses are changed only one time during tCK (min.).
DC Characteristics 2 (TA = 0 to +70
°°°°C, VDD, VDDQ = 3.3V±±±±0.3V, VSS, VSSQ = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–1.0
1.0
A
0 = VIN = VDDQ, VDDQ = VDD,
All other pins not under test = 0V
Output leakage current
ILO
–1.5
1.5
A
0 = VIN = VDDQ DOUT is disabled
Output high voltage
VOH
2.4
—
V
IOH = –2 mA
Output low voltage
VOL
—
0.4
V
IOL = 2 mA
相关PDF资料 |
PDF描述 |
|---|---|
| EDS1232AABB-75 | Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R |
| EDS1232AABB-75L | SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| EF6804P2PVD | Quad 125MHz Video Current Feedback Amplifier with Disable; Temperature Range: -40°C to 85°C; Package: 20-SOIC |
| EF6805P2FNV | Quad 125MHz Video Current Feedback Amplifier with Disable; Temperature Range: -40°C to 85°C; Package: 20-SOIC T&R |
| EF6805P2FNVD | Quad 125MHz Video Current Feedback Amplifier with Disable; Temperature Range: -40°C to 85°C; Package: 20-PDIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EDS1232AABB-60L-E | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232AABB-75 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| EDS1232AABB-75-E | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232AABB-75L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| EDS1232AABB-75L-E | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:128M bits SDRAM |
发布紧急采购，3分钟左右您将得到回复。