参数资料
型号: EE-SX1061
厂商: Omron Electronics Inc-EMC Div
文件页数: 1/4页
文件大小: 219K
描述: OPTO SENSOR 5MM SLOT HIGH AXIS
产品目录绘图: EE Series Slotted
Through Beam Slot Type
标准包装: 200
检测距离: 0.142"(3.6mm)
检测方法: 可传导的
输出配置: 光电晶体管
电流 - DC 正向(If): 50mA
电流 - 集电极 (Ic)(最大): 20mA
电压 - 集电极发射极击穿(最大): 30V
响应时间: 1ms,1ms
安装类型: 通孔
封装/外壳: PCB 安装
包装: 散装
类型: 无放大
工作温度: -40°C ~ 85°C
产品目录页面: 2785 (CN2011-ZH PDF)
其它名称: EESX1061
OR556
Photomicrosensor (Transmissive)   EE-SX1061
113
Photomicrosensor (Transmissive)
EE-SX1061
?SPAN class="pst EE-SX1061_2586936_6"> Dimensions
Note: All units are in millimeters unless otherwise indicated.
?SPAN class="pst EE-SX1061_2586936_6"> Features
" General-purpose model with a 4.6-mm-wide slot.
" PCB mounting type.
" RoHS Compliant.
?SPAN class="pst EE-SX1061_2586936_6"> Absolute Maximum Ratings (Ta = 25?SPAN class="pst EE-SX1061_2586936_6">C)
Note: 1.  Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2.  Complete soldering within 10 seconds.
?SPAN class="pst EE-SX1061_2586936_6"> Ordering Information
?SPAN class="pst EE-SX1061_2586936_6"> Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SX1061_2586936_6">C)
Internal Circuit
K
A
C
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions Tolerance
3 mm max.    
?SPAN class="pst EE-SX1061_2586936_11">0.3
3 < mm d 6    
?SPAN class="pst EE-SX1061_2586936_11">0.375
6 < mm d 10    
?SPAN class="pst EE-SX1061_2586936_11">0.45
10 < mm d 18    
?SPAN class="pst EE-SX1061_2586936_11">0.55
18 < mm d 30    
?SPAN class="pst EE-SX1061_2586936_11">0.65
Unless otherwise specified, the
tolerances are as shown below.
Item
Symbol
Rated value
Emitter
Forward current
I
F
50 mA (see note 1)
Pulse forward
current
I
FP
---
Reverse voltage
V
R
4 V
Detector
CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
---
Collector current
I
C
20 mA
Collector dissipation  P
C
100 mW (see note
1)
Ambient
temperature
Operating
T
opr
40癈 to 85癈
Storage
T
stg
40癈 to 100癈
Soldering temperature
T
sol
260癈 (see note 2)
Description
Model
Photomicrosensor (transmissive)
EE-SX1061
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
 = 30 mA
Reverse current
I
R
0.01 糀 typ., 10 糀 max.
V
R
 = 4 V
Peak emission wavelength
?/DIV>
P
940 nm typ.
I
F
 = 20 mA
Detector
Light current
I
L
1.3 mA min., 26 mA max.
I
F
 = 20 mA, V
CE
 = 12 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE
 = 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated voltage   V
CE
(sat)
0.8 V max.
I
F
 = 10 mA, V
CC
 = 12 V, R
L
 = 22k ?/DIV>
Peak spectral sensitivity wavelength   ?/DIV>
P
850 nm typ.
V
CE
 = 10 V
Rising time
tr
1,000 約 max.
V
CC
 = 12 V, R
L
 = 22k ? I
L
 = 10 mA
Falling time
tf
1,000 約 max.
V
CC
 = 12 V, R
L
 = 22k ? I
L
 = 10 mA
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