参数资料
| 型号： | EL7556DCMZ-T13 |
| 厂商： | Intersil |
| 文件页数： | 10/11页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 6A 28SOIC |
| 标准包装： | 1,000 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 1 V ~ 3.8 V |
| 输入电压： | 5V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 1MHz |
| 电流 - 输出： | 6A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 包装： | 带卷 (TR) |
| 供应商设备封装： | 28-SOIC W |
EL7556D
V OUT = 1V × ? 1 + ------- ? × Volt
control systems, including simpler loop compensation, pulse
by pulse current limiting, rapid response to line variation and
good load step response.
The heart of the controller is a triple-input direct summing
comparator which sums voltage feedback, current feedback
and slope compensating ramp signals together. Slope
compensation is required to prevent system instability which
occurs in current-mode topologies operating at duty-cycles
greater than 50% and is also used to define the open-loop
gain of the overall system. The compensation ramp
amplitude is user adjustable and is set using a single
external capacitor (C SLOPE ). Each comparator input is
weighted and determines the load and line regulation
characteristics of the system. Current feedback is measured
by sensing the inductor current flowing through the high-side
switch whenever it is conducting. At the beginning of each
oscillator period the high-side NMOS switch is turned on and
C SLOPE ramps positively from its reset state (V REF
potential). The comparator inputs are gated off for a
minimum period of time (LEB) after the high-side switch is
turned on to allow the system to settle. The Leading Edge
Blanking (LEB) period prevents the detection of erroneous
voltages at the comparator inputs due to switching noise.
When programming low regulator output voltages the LEB
delay will limit the maximum operating frequency of the
circuit since the LEB will result in a minimum duty-cycle
regardless of the PWM error voltage. This relationship is
shown in the performance curves. If the inductor current
exceeds the maximum current limit (I LMAX ), a secondary
over-current comparator will terminate the high-side switch.
If I LMAX has not been reached, the regulator output voltage
is then compared to the reference voltage V REF . The
resultant error voltage is summed with the current feedback
and slope compensation ramp. The high-side switch
remains on until all three comparator inputs have summed to
zero, at which time the high-side switch is turned off and the
low-side switch is turned on. In order to eliminate cross-
conduction of the high-side and low-side switches a 10ns
break-before-make delay is incorporated in the switch driver
circuitry. In the continuous mode of operation the low-side
switch will remain on until the end of the oscillator period. In
order to improve the low current efficiency of the EL7556D, a
zero-crossing comparator senses when the inductor
transitions through zero. Turning off the low-side switch at
zero inductor current prevents forward conduction through
the internal clamping diodes (LX to V SSP ) when the low-side
switch turns off, reducing power dissipation. The output
enable (OUTEN) input allows the regulator output to be
disabled by an external logic control signal.
Output Voltage Mode Select
The VCC2DET multiplexes the FB1 and FB2 pins to the
PWM controller. A logic 1 on VCC2DET selects the FB2
input and forces the output voltage to the internally
programmed value of 3.50V. A logic zero on VCC2DET
10
selects FB1 and allows the output to be programmed from
1.0 to 3.8V. In general:
? R 3 ?
? R 4 ?
However, due to the relatively low open loop gain of the
system, gain errors will occur as the output voltage and loop-
gain are changed. This is shown in the performance curves.
(The output voltage is factory trimmed to minimize error at a
2.50V output). A 2uA pull-up current from FB1 to V IN forces
V OUT to GND in the event that FB1 is not used and the
VCC2DET is inadvertently toggled between the internal and
external feedback mode of operation.
NMOS Power FETs and Drive Circuitry
The EL7556D integrates low resistance (25m Ω ) NMOS
FETS to achieve high efficiency at 6A. Gate drive for both
the high-side and low-side switches is derived through a
charge pump consisting of the CP pin and external
components D1-D3 and C5-C6. The CP output is a low
resistance inverter driven at one-half the oscillator
frequency. This is used in conjunction with D2-D3 to
generate a 7.5V (typical) voltage on the C2V pin which
provides gate drive to the low-side NMOS switch and
associated level shifter. In order to use an NMOS switch for
the high-side drive it is necessary to drive the gate voltage
above the source voltage (LX). This is accomplished by
boot-strapping the V HI pin above the C2V voltage with
capacitor C6 and diode D1. When the low-side switch is
turned on the LX voltage is close to GND potential and
capacitor C6 is charged through diodes D1-D3 to
approximately 6.9V. At the beginning of the next cycle the
high side switch turns on and the LX pin begins to rise from
GND to V DD potential. As the LX pin rises the positive plate
of capacitor C6 follows and eventually reaches a value of
approximately 11.2V, for V DD =5V. This voltage is then level
shifted and used to drive the gate of the high-side FET, via
the V HI pin.
Reference
A 1% temperature compensated band gap reference is
integrated in the EL7556D. The external C REF capacitor
acts as the dominant pole of the amplifier and can be
increased in size to maximize transient noise rejection. A
value of 0.1uF is recommended.
Oscillator
The system clock is generated by an internal relaxation
oscillator with a maximum duty-cycle of approximately 96%.
Operating frequency can be adjusted through the C OSC pin
or can be driven by an external clock source. If the oscillator
is driven by an external source, care must be taken in the
selection of C SLOPE . Since the C OSC and C SLOPE values
determine the open loop gain of the system, changes to
C OSC require corresponding changes to C SLOPE in order to
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