参数资料
| 型号： | EPC9002 |
| 厂商： | EPC |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | BOARD DEV FOR EPC2001 100V GAN |
| 应用说明： | Thermal Performance of eGaN® FETs Assembling eGaN® FETS Using eGaN® FETs |
| 产品培训模块： | eGaN™ Basics eGaN™ Power Transistors Characteristics Drivng eGaN™ Power Transistors eGaN FETs for DC-DC Conversion |
| RoHS指令信息： | Lead Free/RoHS Statement |
| 设计资源： | EPC9002 Schematic EPC9002 Gerber Files |
| 特色产品： | EPC Development Tools |
| 标准包装： | 1 |
| 系列： | eGaN® |
| 主要目的： | 电源管理，半 H 桥驱动器（外部 FET） |
| 嵌入式： | 否 |
| 已用 IC / 零件： | EPC2001 |
| 主要属性： | 100V，10A 最大输出 GaNFET 功率 |
| 次要属性： | GaNFET 驱动器电路，采用 7 ~ 12V 电压 |
| 已供物品： | 板 |
| 产品目录页面： | 1139 (CN2011-ZH PDF) |
| 其它名称： | 917-1011 |
Quick Start Procedure
Development board EPC9002 is easy to set up to evaluate the performance of the EPC2001 eGaN FET . Refer to Figure 2 for proper connect
and measurement setup and follow the procedure below:
1.
2.
3.
4.
5.
6.
7.
8.
With power off, connect the input power supply bus to +V IN (J5, J6) and ground / return to –V IN (J7, J8).
With power off, connect the switch node of the half bridge OUT (J3, J4) to your circuit as required.
With power off, connect the gate drive supply to +V DD (J1, Pin-1) and ground return to –V DD (J1, Pin-2).
With power off, connect the input PWM control signal to PWM (J2, Pin-1) and ground return to any of the remaining J2 pins.
Turn on the gate drive supply – make sure the supply is between 7 V and 12 V range.
Turn on the bus voltage to the required value (do not exceed the absolute maximum voltage of 100 V on V OUT ).
Turn on the controller / PWM input source and probe switching node to see switching operation.
Once operational, adjust the bus voltage and load PWM control within the operating range and observe the output switching behavior,
efficiency and other parameters.
9. For shutdown, please follow steps in reverse.
NOTE. When measuring the high frequency content switch node (OUT), care must be taken to avoid long ground leads. Measure the switch node (OUT) by placing the
oscilloscope probe tip through the large via on the switch node (designed for this purpose) and grounding the probe directly across the GND terminals provided. See
Figure 3 for proper scope probe technique.
THERMAL CONSIDERATIONS
The EPC9002 development board showcases the EPC2001 eGaN FET . Although the electrical performance surpasses that for traditional silicon
devices, their relatively smaller size does magnify the thermal management requirements. The EPC9002 is intended for bench evaluation with low
ambient temperature and convection cooling. The addition of heat-sinking and forced air cooling can significantly increase the current rating of
these devices, but care must be taken to not exceed the absolute maximum die temperature of 125°C.
NOTE. The EPC9002 development board does not have any current or thermal protection on board.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EPC9002C | 功能描述:EPC2001C eGaN? Series Power Management Evaluation Board 制造商:epc 系列:eGaN? 零件状态:有效 主要用途:电源管理 嵌入式:- 使用的 IC/零件:EPC2001C 主要属性:- 辅助属性:- 所含物品:板 标准包装:1 |
| EPC9003 | 功能描述:BOARD DEV FOR EPC2010 200V GAN RoHS:否 类别:编程器，开发系统 >> 评估演示板和套件 系列:eGaN® 标准包装:1 系列:- 主要目的:电信，线路接口单元（LIU） 嵌入式:- 已用 IC / 零件:IDT82V2081 主要属性:T1/J1/E1 LIU 次要属性:- 已供物品:板，电源，线缆，CD 其它名称:82EBV2081 |
| EPC9003C | 功能描述:EPC2010C eGaN? Series Power Management, Half H-Bridge Driver (External FET) Evaluation Board 制造商:epc 系列:eGaN? 零件状态:有效 主要用途:电源管理，半 H 桥驱动器（外部 FET） 嵌入式:否 使用的 IC/零件:EPC2010C 主要属性:- 辅助属性:- 所含物品:板 标准包装:1 |
| EPC9004 | 功能描述:BOARD DEV FOR EPC2012 200V EGAN RoHS:否 类别:编程器，开发系统 >> 评估演示板和套件 系列:eGaN® 标准包装:1 系列:PSoC® 主要目的:电源管理，热管理 嵌入式:- 已用 IC / 零件:- 主要属性:- 次要属性:- 已供物品:板，CD，电源 |
| EPC9004C | 功能描述:EPC2012C eGaN? Series Power Management, Half H-Bridge Driver (External FET) Evaluation Board 制造商:epc 系列:eGaN? 零件状态:有效 主要用途:电源管理，半 H 桥驱动器（外部 FET） 嵌入式:否 使用的 IC/零件:EPC2012C 主要属性:- 辅助属性:- 所含物品:板 标准包装:1 |
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