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参数资料
| 型号： | ES29BDS400E-90RWCI |
| 厂商： | 优先(苏州)半导体有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 39/51页 |
| 文件大小： | 697K |
| 代理商： | ES29BDS400E-90RWCI |
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ES I
44
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
PARALLEL TO
SEATING PLANE
θ°
L
R
c
0.25MM
(0.0098”) BSC
B
A
SEE DETAIL A
DETAIL A
-A-
-B-
SEE DETAIL B
D1
D
N
2
----
N
2
----
1
+
A2
0.10 C
e
A1
-C-
SEATING
PLANE
GAUGE
PLANE
-X-
e/2
X = A OR B
b
c1
b1
(c)
WITH
PLATING
BASE
METAL
DETAIL B
SECTION B-B
0.08MM (0.0031”) M C A-B S
2
1
N
E
5
4
5
9
67
7
Package
TS 48
JEDEC
MO-142 (B) DD
Symbol
MIN
NOM
MAX
A
-
1.20
A1
0.05
-
0.15
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
b
0.17
0.22
0.27
c1
0.10
-
0.16
c
0.10
-
0.21
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
E
11.90
12.00
12.10
e
0.50 BASIC
L
0.50
0.60
0.70
R
0.08
-
0.20
N48
θ
0
°
5
°
3
°
NOTES:
1. Controlling dimensions are in millimeters(mm). (Dimensioning
and tolerancing conforms to ANSI Y14.5M-1982)
2. Pin 1 identifier for standard pin out (Die up).
3. Pin 1 identifier for reverse pin out (Die down): Ink or Laser mark
4. To be determined at the seating plane. The seating plane is def-
ined as the plane of contact that is made when the package lea-
ds are allowed to rest freely on a flat horizontal surface.
5. Dimension D1 and E do not include mold protrusion. Allowable
mold protrusion is 0.15mm (0.0059”) per side.
6. Dimension b does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.0031”) total in excess
of b dimension at max. material condition. Minimum space
between protrusion and an adjacent lead to be 0.07mm
(0.0028”).
7. These dimensions apply to the flat section of the lead between
0.10mm (0.0039”) and 0.25mm (0.0098”) from the lead tip.
8. Lead coplanarity shall be within 0.10mm (0.004”) as measured
from the seating plane.
9. Dimension “e” is measured at the centerline of the leads.
PHYSICAL DIMENSIONS
48-Pin Standard TSOP (measured in millimeters)
相关PDF资料 |
PDF描述 |
|---|---|
| ES29BDS400ET-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FB-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FT-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES2BA | 2 A, 100 V, SILICON, RECTIFIER DIODE |
| ES3250402ATL | POWER/SIGNAL RELAY, 3PDT, MOMENTARY, 0.097A (COIL), 28VDC (COIL), 2716mW (COIL), 25A (CONTACT), 28VDC (CONTACT), PANEL MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ES29BDS400EB-12TG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-70WC | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-90RTGI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-90TGI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400F-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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