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参数资料
| 型号： | ES29BDS400E-90RWCI |
| 厂商： | 优先(苏州)半导体有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 4/51页 |
| 文件大小： | 697K |
| 代理商： | ES29BDS400E-90RWCI |
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ES I
12
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
START
RESET# = VID
Set up sector
address
COUNT = 1
Wait 1us
First Write
Cycle = 60h?
Sector Protect:
Write 60h to sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Wait 150us
Verify Sector
Protect:
Write 40h to sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Data = 01h?
Protect another
sector?
Remove VID
from RESET#
Write reset
command
Sector Protect
complete
Temporary Sector
Unprotect Mode
No
COUNT=25?
Increment
COUNT
Read from sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Device failed
No
Yes
No
Reset
COUNT = 1
Yes
Figure 2. In-System Sector
Protect Algorithm
Yes
START
RESET# = VID
Set up first sector
address
COUNT = 1
Wait 1us
First Write
Cycle = 60h?
Sector Unpro-
tect:
Write 60h to sec-
tor address with
A6 = 1, A1 = 1,
Wait 15ms
Verify Sector
Unprotect:
Write 40h to sec-
tor address with
A6 = 1, A1 = 1,
A0 = 0
Data = 00h?
Last sector
verified?
Remove VID from
RESET#
Write reset
command
Sector Unprotect
complete
Temporary Sector
Unprotect Mode
No
COUNT
=1000?
Increment
COUNT
Read from sec-
tor address with
A6 = 1, A1 = 1,
A0 = 0
Device failed
No
Yes
No
Set up next
sector address
Yes
All sectors
protected ?
Protect all sectors:
The indicated por-
tion of the sector
protect algorithm
must be performed
for all unprotected
sectors prior to
issuing the first
sector unprotect
address
No
Yes
Figure 3. In-System Sector
Unprotect Algorithm
In-System Protection / Unprotection Method
相关PDF资料 |
PDF描述 |
|---|---|
| ES29BDS400ET-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FB-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FT-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES2BA | 2 A, 100 V, SILICON, RECTIFIER DIODE |
| ES3250402ATL | POWER/SIGNAL RELAY, 3PDT, MOMENTARY, 0.097A (COIL), 28VDC (COIL), 2716mW (COIL), 25A (CONTACT), 28VDC (CONTACT), PANEL MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ES29BDS400EB-12TG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-70WC | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-90RTGI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-90TGI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400F-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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