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参数资料
| 型号： | ES29BDS400FB-70RWCI |
| 厂商： | 优先(苏州)半导体有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 51/51页 |
| 文件大小： | 697K |
| 代理商： | ES29BDS400FB-70RWCI |
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ES I
9
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
In-System Unprotection
“In-system
unprotection”,
the
primary
method,
requires VID (11.5V~12.5V) on the RESET# with
A6=1, A1=1, and A0=0. This method can be imple-
mented either in-system or via programming equip-
ment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 26 for timing diagram
and Fig. 3 for the unprotection algorithm.
A9 High-Voltage Unprotection
“High-voltage unprotection”, the alternate method
intended only for programming equipment, must
force VID (11.5~12.5V) on address pin A9 and con-
trol pin OE# with A6=1, A1=1 and A0=0. Refer to
Fig. 29 for timing diagram and Fig. 5 for the unpro-
tection algorithm.
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting
the RESET# pin to VID (11.5V-12.5V). During this
mode, formerly protected sectors can be pro-
grammed
or
erased
by
selecting
the
sector
addresses. Once VID is removed from the RESET#
pin, all the previously protected sectors are pro-
tected again. Fig. 1 shows the algorithm, and Fig. 25
shows the timing diagrams for this feature.
HARDWARE DATA PROTECTION
The ES29LV400 device provides some protection
measures against accidental erasure or program-
ming caused by spurious system level signals that
may exist during power transition. During power-up,
all internal registers and latches in the device are
cleared and the device automatically resets to the
read mode. In addition, with its internal state
machine built-in the device, any alteration of the
memory contents or any initiation of new operation-
can only occur after successful completion of spe-
cific command sequences. And several features are
incorporated to prevent inadvertent write cycles
resulting from Vcc power-up and power-down transi-
tion or system noise.
Low Vcc Write inhibit
When Vcc is less than VLKO, the device does not
accept any write cycles. This protects data during
Vcc power-up and power-down.
The command register and all internal program/
erase circuits are disabled, and the device resets to
the read mode. Subsequent writes are ignored until
Vcc is greater than VLKO. The system must provide
proper signals to the control pins to prevent unin-
tentional writes when Vcc is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical inhibit
Write cycles are inhibited by holding any one of
OE#=VIL, CE#=VIH or WE#=VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while
OE# is a logical one.
Power-up Write Inhibit
If WE#=CE#=VIL and OE#=VIH during power up,
the device does not accept any commands on the
rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
Notes:
1. All protected sectors are unprotected .
2. All previously protected sectors are protected once again.
Figure 1. Temporary Sector Unprotect
Operation
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
相关PDF资料 |
PDF描述 |
|---|---|
| ES29BDS400FT-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ES29BDS400FB-90TGI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FT-70RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FT-70RWCI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FT-80TG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FT-90RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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