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参数资料
| 型号： | EVAL-ADF4157EB1Z |
| 厂商： | Analog Devices Inc |
| 文件页数： | 18/24页 |
| 文件大小： | 0K |
| 描述： | BOARD EVALUATION FOR ADF4157 |
| 标准包装： | 1 |
| 主要目的： | 计时，频率合成器 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | ADF4157 |
| 主要属性： | 单路分数-N PLL |
| 次要属性： | 6GHz |
| 已供物品： | 板 |
| 相关产品： | ADF4157BRUZ-ND - IC PLL FREQ SYNTH 6GHZ 16TSSOP ADF4157BRUZ-RL7-ND - IC PLL FREQ SYNTH 6GHZ 16TSSOP ADF4157BRUZ-RL-ND - IC PLL FREQ SYNTH 6GHZ 16TSSOP |
Data Sheet
ADF4157
Rev. D | Page 3 of 24
SPECIFICATIONS
AVDD = DVDD = 2.7 V to 3.3 V; VP = AVDD to 5.5 V; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted;
dBm referred to 50 .
Table 1.
Parameter
B Version1
Unit
Test Conditions/Comments
RF CHARACTERISTICS (3 V)
RF Input Frequency (RFIN)
0.5/6.0
GHz min/max
10 dBm/0 dBm min/max; for lower frequencies, ensure slew rate
(SR) > 400 V/s
REFERENCE CHARACTERISTICS
REFIN Input Frequency
10/300
MHz min/max
For fREFIN < 10 MHz, ensure slew rate > 50 V/s
REFIN Input Sensitivity
0.4/AVDD
V p-p min/max
0.7/AVDD
V p-p min/max
REFIN Input Capacitance
10
pF max
REFIN Input Current
±100
A max
PHASE DETECTOR
Phase Detector Frequency3
32
MHz max
CHARGE PUMP
ICP Sink/Source
Programmable
High Value
5
mA typ
With RSET = 5.1 kΩ
Low Value
312.5
A typ
Absolute Accuracy
2.5
% typ
With RSET = 5.1 kΩ
RSET Range
2.7/10
kΩ min/max
ICP Three-State Leakage Current
1
nA typ
Sink and source current
Matching
2
% typ
0.5 V < VCP < VP – 0.5
ICP vs. VCP
2
% typ
0.5 V < VCP < VP – 0.5
ICP vs. Temperature
2
% typ
VCP = VP/2
LOGIC INPUTS
VINH, Input High Voltage
1.4
V min
VINL, Input Low Voltage
0.6
V max
IINH/IINL, Input Current
±1
A max
CIN, Input Capacitance
10
pF max
LOGIC OUTPUTS
VOH, Output High Voltage
1.4
V min
Open-drain 1 kΩ pull-up to 1.8 V
VOH, Output High Voltage
VDD – 0.4
V min
CMOS output chosen
VOL, Output Low Voltage
0.4
V max
IOL = 500 A
POWER SUPPLIES
AVDD
2.7/3.3
V min/max
DVDD
AVDD
VP
AVDD/5.5
V min/V max
IDD
29
mA max
23 mA typical
Low Power Sleep Mode
10
A typ
NOISE CHARACTERISTICS
Normalized Phase Noise Floor
(
PN
SYNTH)
211
dBc/Hz typ
PLL loop B/W = 500 kHz;
measured at 100 kHz
Normalized 1/f Noise (PN1_f)5
110
dBc/Hz typ
10 kHz offset; normalized to 1 GHz
Phase Noise Floor6
137
dBc/Hz typ
@ 10 MHz PFD frequency
133
dBc/Hz typ
@ 25 MHz PFD frequency
Phase Noise Performance7
@ VCO output
5800 MHz Output8
87
dBc/Hz typ
@ 2 kHz offset, 25 MHz PFD frequency
1 Operating temperature of B version is 40°C to +85°C.
2 AC-coupling ensures AV
DD/2 bias.
3 Guaranteed by design. Sample tested to ensure compliance.
4 The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log(N) (where N is the N divider
value) and 10 log(FPFD). PNSYNTH = PNTOT 10 log(FPFD) 20 log(N).
5 The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, F
RF,
and at a frequency offset f is given by PN = PN1_f + 10 log(10 kHz/f) + 20 log(FRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
6 The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider value).
7 The phase noise is measured with the EV-ADF4157SD1Z and the Agilent E5052A phase noise system.
8 f
REFIN = 100 MHz; fPFD = 25 MHz; offset frequency = 2 kHz; RFOUT = 5800.25 MHz; N = 232; loop bandwidth = 20 kHz.
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