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| 型号： | EVAL-ADF4351EB1Z |
| 厂商： | Analog Devices Inc |
| 文件页数： | 25/28页 |
| 文件大小： | 0K |
| 描述： | BOARD 1 EVAL FOR ADF4351 |
| 标准包装： | 1 |
| 系列： | * |
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ADF4351
Data Sheet
Rev. 0 | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AV
DD to GND
0.3 V to +3.9 V
AV
DD to DVDD
0.3 V to +0.3 V
V
VCO to GND
0.3 V to +3.9 V
V
VCO to AVDD
0.3 V to +0.3 V
Digital I/O Voltage to GND1
0.3 V to V
DD + 0.3 V
0.3 V to V
DD + 0.3 V
REF
IN to GND
0.3 V to V
DD + 0.3 V
Operating Temperature Range
40°C to +85°C
Storage Temperature Range
65°C to +125°C
Maximum Junction Temperature
150°C
Reflow Soldering
Peak Temperature
260°C
Time at Peak Temperature
40 sec
1 GND = AGND = DGND = CP
GND = SDGND = AGNDVCO = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1.5 kV and is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count for the ADF4351 is 36,955 (CMOS) and
986 (bipolar).
THERMAL RESISTANCE
Thermal impedance (θJA) is specified for a device with the
exposed pad soldered to GND.
Table 4. Thermal Resistance
Package Type
θ
JA
Unit
32-Lead LFCSP (CP-32-2)
27.3
°C/W
ESD CAUTION
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