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| 型号： | FAN3100CSX |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 17/22页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRVR SGL CMOS 2A SOT23-5 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 特色产品： | FANxx Series of High-Speed, Low-Side Gate Drivers |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 差分 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 3A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 标准包装 |
| 产品目录页面： | 1214 (CN2011-ZH PDF) |
| 其它名称： | FAN3100CSXDKR |
Operational Waveforms
At power up, the driver output remains low until the V DD
voltage reaches the turn-on threshold. The magnitude of
the OUT pulses rises with V DD until steady-state V DD is
reached. The non-inverting operation illustrated in
Figure 47 shows that the output remains low until the
UVLO threshold is reached, then the output is in-phase
with the input.
source voltage, V GS , with gate charge, Q G , at
switching frequency, f SW , is determined by:
P GATE = Q G ? V GS ? F SW (2)
Dynamic Pre-drive / Shoot-through Current: A power
loss resulting from internal current consumption
under dynamic operating conditions, including pin
pull-up / pull-down resistors, can be obtained using
the I DD (no-Load) vs. Frequency graphs in Typical
Performance Characteristics to determine the
current I DYNAMIC drawn from V DD under actual
operating conditions:
P DYNAMIC = I DYNAMIC ? V DD
(3)
Once the power dissipated in the driver is determined,
the driver junction rise with respect to circuit board can
be evaluated using the following thermal equation,
assuming ψ JB was determined for a similar thermal
design (heat sinking and air flow):
T J
= P TOTAL ? ψ JB + T B
(4)
where:
Figure 47. Non-Inverting Start-Up Waveforms
For the inverting configuration of Figure 46, start-up
waveforms are shown in Figure 48. With IN+ tied to
VDD and the input signal applied to IN–, the OUT pulses
are inverted with respect to the input. At power up, the
inverted output remains low until the V DD voltage
reaches the turn-on threshold, then it follows the input
with inverted phase.
T J = driver junction temperature
ψ JB = (psi) thermal characterization parameter
relating temperature rise to total power
dissipation
T B = board temperature in location defined in the
Thermal Characteristics table.
In a typical forward converter application with 48V input,
as shown in Figure 49, the FDS2672 would be a
potential MOSFET selection. The typical gate charge
would be 32nC with V GS = V DD = 10V. Using a TTL input
driver at a switching frequency of 500kHz, the total
power dissipation can be calculated as:
P GATE = 32nC ? 10V ? 500kHz = 0.160W
P DYNAMIC = 8mA ? 10V = 0.080W
P TOTAL = 0.24W
(5)
(6)
(7)
The 5-pin SOT23 has a junction-to-lead thermal
characterization parameter ψ JB = 51°C/W.
In a system application, the localized temperature
around the device is a function of the layout and
construction of the PCB along with airflow across the
surfaces. To ensure reliable operation, the maximum
Figure 48. Inverting Start-Up Waveforms
Thermal Guidelines
Gate drivers used to switch MOSFETs and IGBTs at
high frequencies can dissipate significant amounts of
junction temperature of the device must be prevented
from exceeding the maximum rating of 150°C; with 80%
derating, T J would be limited to 120°C. Rearranging
Equation 4 determines the board temperature required
to maintain the junction temperature below 120°C:
power. It is important to determine the driver power
dissipation and the resulting junction temperature in the
application to ensure that the part is operating within
T B,MAX = T J - P TOTAL ? ψ JB
T B,MAX = 120°C – 0.24W ? 51°C/W = 108°C
(8)
(9)
acceptable temperature limits.
The total power dissipation in a gate driver is the sum of
For comparison purposes, replace the 5-pin SOT23
used in the previous example with the 6-pin MLP
two components; P GATE and P DYNAMIC :
P TOTAL = P GATE + P DYNAMIC
(1)
package with ψ JB = 2.8°C/W. The 6-pin MLP package
can operate at a PCB temperature of 119°C, while
Gate Driving Loss: The most significant power loss
results from supplying gate current (charge per unit
time) to switch the load MOSFET on and off at the
switching frequency. The power dissipation that
results from driving a MOSFET at a specified gate-
? 2007 Fairchild Semiconductor Corporation
FAN3100 ? Rev. 1.0.4
17
maintaining the junction temperature below 120°C. This
illustrates that the physically smaller MLP package with
thermal pad offers a more conductive path to remove
the heat from the driver. Consider the tradeoffs between
reducing overall circuit size with junction temperature
reduction for increased reliability.
www.fairchildsemi.com
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