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| 型号： | FAN3268TMX |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 14/17页 |
| 文件大小： | 0K |
| 描述： | IC BRIDGE DVR P/N-CH 2A 8SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 14ns |
| 电流 - 峰： | 3A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FAN3268TMXDKR |
Thermal Guidelines
Gate drivers used to switch MOSFETs and IGBTs at
high frequencies can dissipate significant amounts of
As an example of a power dissipation calculation,
consider an application driving two MOSFETs with a
gate charge of 60 nC with V GS =V DD =7 V. At a switching
frequency of 500 kHz, the total power dissipation is:
power. It is important to determine the driver power
dissipation and the resulting junction temperature in the
application to ensure that the part is operating within
acceptable temperature limits.
P GATE =60nC ? 7V ? 500kHz ? 2=0.42W
P DYNAMIC =3mA ? 7V ? 2=0.042W
P TOTAL =0.46W
(5)
(6)
(7)
The total power dissipation in a gate driver is the sum of
two components, P GATE and P DYNAMIC :
P TOTAL =P GATE + P DYNAMIC (1)
Gate Driving Loss: The most significant power loss
results from supplying gate current (charge per unit
time) to switch the load MOSFET on and off at the
switching frequency. The power dissipation that
results from driving a MOSFET at a specified gate-
source voltage, V GS , with gate charge, Q G , at
switching frequency, f SW , is determined by:
The SOIC-8 has a junction-to-board thermal
characterization parameter of ψ JB =43°C/W. In a system
application, the localized temperature around the device
is a function of the layout and construction of the PCB
along with airflow across the surfaces. To ensure
reliable operation, the maximum junction temperature of
the device must be prevented from exceeding the
maximum rating of 150°C; with 80% derating, T J would
be limited to 120°C. Rearranging Equation 4 determines
the board temperature required to maintain the junction
temperature below 120°C:
P GATE =Q G ? V GS ? f SW ? n (2)
where n is the number of driver channels in use
(1 or 2).
Dynamic Pre-drive / Shoot-through Current: A
power loss resulting from internal current
consumption under dynamic operating conditions,
including pin pull-up / pull-down resistors, can be
obtained using the “I DD (No-Load) vs. Frequency”
graphs in Typical Performance Characteristics to
determine the current I DYNAMIC drawn from V DD
under actual operating conditions:
P DYNAMIC =I DYNAMIC ? V DD ? n
(3)
Once the power dissipated in the driver is determined,
the driver junction rise with respect to circuit board can
be evaluated using the following thermal equation,
assuming ψ JB was determined for a similar thermal
design (heat sinking and air flow):
T B =T J - P TOTAL ? ψ JB
T B =120°C – 0.46W ? 43°C/W=100°C
(8)
(9)
T J
=P TOTAL ? ψ JB + T B
(4)
where:
T J =driver junction temperature
ψ JB =(psi) thermal characterization parameter relating
temperature rise to total power dissipation
T B =board temperature in location defined in
Note 2 under Thermal Resistance table.
? 2009 Fairchild Semiconductor Corporation
FAN3268 ? Rev. 1.0.3
14
www.fairchildsemi.com
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