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参数资料
| 型号： | FCH20N60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 20A TO-247 |
| 标准包装： | 30 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 190 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 98nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3080pF @ 25V |
| 功率 - 最大： | 208W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FCH20N60_NL FCH20N60_NL-ND |
SuperFET
December 200 8
TM
FCH20N60 / FCA20N60 / FCA20N60_F109
600V N-Channel MOSFET
Features
? 650V @T J = 150°C
? Typ. Rds(on)=0.15 ?
? Ultra low gate charge (typ. Qg=55nC)
? Low effective output capacitance (typ. Coss.eff=110pF)
? 100% avalanche tested
? RoHS C ompliant
Description
SuperFET TM is, Fa i rchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
G D
S
TO-247
FCH Series
G D S
TO-3P N
FCA Series
S
Absolute Maximum Ratings
Symbol
V DSS
Drain-Source Voltage
Parameter
FCH20N60
600
FCA20N60
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
20
12.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
60
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
690
20
20.8
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
208
1.67
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.6
--
41.7
Unit
° C/W
° C/W
?200 8 Fairchild Semiconductor Corporation
FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A 4
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FCH22N60N | MOSFET N-CH 600V 22A TO-247 |
| FCH25N60N | MOSFET N-CH 600V 25A TO-247 |
| FCH35N60 | MOSFET N-CH 600V 35A TO-247 |
| FCH47N60_F133 | MOSFET N-CH 600V 47A TO-247 |
| FCH47N60F_F133 | MOSFET N-CH 600V 47A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCH20N60_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCH20N60_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCH20U15 | 制造商:NIEC 制造商全称:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
| FCH22N60N | 功能描述:MOSFET SUPREMOS 22A-TO247 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCH25N60N | 功能描述:MOSFET 600V N-Channel MOSFET SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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