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参数资料
| 型号： | FCH76N60N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 76A TO-247 |
| 标准包装： | 150 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 76A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 38A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 285nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 12385pF @ 100V |
| 功率 - 最大： | 543W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
November 2013
FCH76N60N
N-Channel SupreMOS ? MOSFET
600 V, 76 A, 36 m Ω
Features
? R DS(on) = 28 m Ω (Typ.) @ V GS = 10 V, I D = 38 A
? Ultra Low Gate Charge (Typ. Q g = 218 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 914 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
? Solar Inverter
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
? AC-DC Power Supply
D
G
G
D
S
TO-247
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCH76N60N
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
76
48.1
V
A
I DM
Drain Current
- Pulsed
(Note 1)
228
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
8022
25.3
5.43
100
20
543
4.34
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCH76N60N
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.23
40
o
C/W
?2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FCH76N60N_1112 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FCH76N60NF | 功能描述:MOSFET 600V N-Chan MOSFET FRFET, SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCHC10-100K-RC | 制造商:ALLIED 制造商全称:Allied Components International 功能描述:Ferrite Core Chip Inductors High Current |
| FCHC10-150K-RC | 制造商:ALLIED 制造商全称:Allied Components International 功能描述:Ferrite Core Chip Inductors High Current |
| FCHC10-1R0K-RC | 制造商:ALLIED 制造商全称:Allied Components International 功能描述:Ferrite Core Chip Inductors High Current |
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