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参数资料
| 型号： | FCI25N60N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 25A I2PAK |
| 标准包装： | 50 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 74nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3352pF @ 100V |
| 功率 - 最大： | 216W |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
November 2013
FCI25N60N
N-Channel SupreMOS ? MOSFET
600 V, 25 A, 125 m Ω
Features
? R DS(on) = 107 m Ω (Typ.) @ V GS = 10 V, I D = 12.5 A
? Ultra Low Gate Charge (Typ. Q g = 57 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 262 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
DS
G
I 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25
o
C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCI25N60N_F102
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
25
16
V
A
I DM
Drain Current
- Pulsed
(Note 1)
75
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
861
8.3
2.2
100
15
216
1.72
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FCI25N60N_F102
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.58
62.5
o
C/W
?2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FCI25N60N_F102 | 功能描述:MOSFET 600V N-CHAN SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCI25N60NF102 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel SupreMOS?? MOSFET 600 V, 25 A, 125 m?? |
| FCI7N60 | 功能描述:MOSFET HIGH_POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCI-BP | 制造商:TURCK Inc 功能描述:FCI-BP |
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