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参数资料
| 型号： | FCI25N60N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 25A I2PAK |
| 标准包装： | 50 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 74nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3352pF @ 100V |
| 功率 - 最大： | 216W |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
Package Marking and Ordering Information
Part Number
FCI25N60N_F102
Top Mark
FCI25N60N
Package
I 2 -PAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 1 mA, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 1 mA, V GS = 0 V,T J = 25 o C
o
V DS = 480 V, V GS = 0 V
V DS = 480 V, T J = 125 o C
V GS = ±30 V, V DS = 0 V
600
-
-
-
-
-
0.74
-
-
-
-
-
10
100
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 12.5 A
V DS = 20 V, I D = 12.5 A
2.0
-
-
-
0.107
4.0
0.125
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 100 V, V GS = 0 V,
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0 V
-
-
-
-
-
2520
103
3.2
55
262
3352
137
5
-
-
pF
pF
pF
pF
pF
Q g(tot)
Q gs
Q gd
ESR
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 380 V, I D = 12.5 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
57
10
18
1
74
-
-
-
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 12.5 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
21
22
68
5
52
54
146
20
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
25
75
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 12.5 A
V GS = 0 V, I SD = 12.5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
370
7
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 8.3 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 25 A, di/dt ≤ 200 A/ μ s, V DD ≤ 380 V, starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
2
www.fairchildsemi.com
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