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参数资料
| 型号： | FCPF13N60NT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 13A TO220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | SuperMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 258 毫欧 @ 6.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 39.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1765pF @ 100V |
| 功率 - 最大： | 33.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
FCP13N60N
FCPF13N60NT
Top Mark
FCP13N60N
FCPF13N60NT
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 1 mA, V GS = 0 V, T C = 25 o C
600
-
-
V
Δ BV DSS
/ Δ T J
Breakdown Voltage Temperature
Coefficient
I D = 1 mA, Referenced to
25 o C
-
0.73
-
V/ o C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V DS = 480 V, V GS = 0 V
V DS = 480 V, V GS = 0 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
-
-
-
-
-
-
10
100
±100
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 6.5 A
V DS = 40 V, I D = 6.5 A
2.0
-
-
-
0.220
16.3
4.0
0.258
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Q g(tot)
Q gs
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 100 V, V GS = 0 V,
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0 V
V DS = 380 V,I D = 6.5 A,
V GS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
1325
50
3
30
145
30.4
6.0
9.5
2.8
1765
65
5
-
-
39.5
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 6.5 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
14.5
10.6
45
9.8
39
31.2
100
29.6
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
13*
39
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 6.5 A
V GS = 0 V, I SD = 6.5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
287
3.5
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 4.3 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 13 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2009 Fairchild Semiconductor Corporation
FCP13N60N / FCPF13N60NT Rev. C1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FCPF13N60T | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FCPF16N60 | 功能描述:MOSFET 600V N-CH SuperFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF16N60NT | 功能描述:MOSFET SupreMOS 16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF190N60 | 功能描述:MOSFET SuperFET2, 190mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF190N60_F152 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 20.2A TO-220F |
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