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参数资料
| 型号： | FCPF22N60NT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 22A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 特色产品： | FCPF22N60NT Super-Junction SupreMOS? MOSFETs |
| 标准包装： | 50 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 22A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 165 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1950pF @ 100V |
| 功率 - 最大： | 39W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
November 2013
FCP22N60N / FCPF22N60NT
N-Channel SupreMOS ? MOSFET
600 V, 22 A, 165 m Ω
? BV DSS > 650 V @ T J = 150 C
Features
o
? R DS(on) = 140 m Ω (Typ.) @ V GS = 10 V, I D = 11 A
? Ultra Low Gate Charge (Typ. Q g = 45 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 196.4 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
? LCD/LED/PDP TV
? Lighting
? Solar Inverter
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
S
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCP22N60N
FCPF22N60NT
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
22
13.8
±45
22*
13.8*
V
A
I DM
E AS
I AR
E AR
dv/dt
P D
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed
(T C = 25 o C)
- Derate Above 25 o C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
66
205
1.64
672
7.3
2.75
100
20
66*
39
0.31
A
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP22N60N
0.61
62.5
FCPF22N60NT
3.2
62.5
Unit
o C/W
?2009 Fairchild Semiconductor Corporation
FCP22N60N / FCPF22N60NT Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FCPF260N60E_F152 | 制造商:Fairchild Semiconductor Corporation 功能描述:SUPERFET2, 260MOHM, TO220F 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 600V 15A TO-220F 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / SuperFET2, 260mohm, TO220F |
| FCPF36N60NT | 制造商:Fairchild Semiconductor Corporation 功能描述:SUPREMOS, 36A IN TF220 - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IC LINEAR 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / SupreMOS, 36A in TF220 |
| FCPF380N60 | 功能描述:MOSFET SuperFET2, 380mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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