- 您现在的位置：买卖IC网 > Datasheet目录414 > FCPF7N60NT (Fairchild Semiconductor)MOSFET N-CH 600V 6.8A TO-220F Datasheet资料下载
参数资料
| 型号： | FCPF7N60NT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 6.8A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 520 毫欧 @ 3.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 960pF @ 100V |
| 功率 - 最大： | 30.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
December 2013
FCPF7N60NT
N-Channel MOSFET
600 V, 6.8 A, 0.52 Ω
Features
? Typ R DS(on) = 460m Ω
? Ultra Low Gate Charge (typ. Q g = 17.8 nC)
? Low Effective Output Capacitance (typ. C oss(eff.) = 91 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology em-
ploying a deep trench filling process that differentiates it from the
conventional SJ MOSFETs. This advanced technology and pre-
cise process control provides lowest Rsp on-resistance, superior
switching performance and ruggedness. SupreMOS MOSFET is
suitable for high frequency switching power converter applica-
tions such as PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
D
G
S
TO-220F
G
MOSFET Maximum Ratings T C = 25 C unless otherwise noted.
S
o
Symbol
V DSS
Drain to Source Voltage
Parameter
FCPF7N60NT
600
Units
V
V GSS
I D
Gate to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
±30
6.8*
4.3*
V
A
I DM
E AS
I AR
E AR
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
- Pulsed
(Note 1)
(Note 2)
20.4
79.4
6.8
0.6
A
mJ
A
mJ
dv/dt
P D
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 3)
100
4.9
30.5
0.24
V/ns
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF7N60NT
4.1
62.5
Units
o C/W
?2012 Fairchild Semiconductor Corporation
FCPF7N60NT Rev. C2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FCPF7N60T | MOSFET N-CH 600V 7A TO-220F |
| FCTN-RLY4-418-MOM | MODULE MOM RECEIVER 418MHZ |
| FCTN-WALL-433 | MODULE AC SWITCH RECEIVER 433MHZ |
| FCX11362_IRIS | LENS FOR CREE XP-E/G |
| FDA032N08 | MOSFET N-CH 75V 120A TO-3P |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCPF7N60T | 功能描述:MOSFET N-CH 600V 7A TO-220F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SuperFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| FCPF7N60YDTU | 功能描述:MOSFET 600V N-Channel SuperFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF9N60NT | 功能描述:MOSFET SupreMOS 9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPH1280-10 | 制造商:SYNERGY 制造商全称:SYNERGY MICROWAVE CORPORATION 功能描述:FIXED FREQUENCY SYNTHESIZER |
| FCPH243250-100 | 制造商:SYNERGY 制造商全称:SYNERGY MICROWAVE CORPORATION 功能描述:SELECTABLE FREQUENCY SYNTHESIZER |
发布紧急采购，3分钟左右您将得到回复。