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参数资料
| 型号： | FCPF7N60NT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 6.8A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 520 毫欧 @ 3.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 960pF @ 100V |
| 功率 - 最大： | 30.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Device Marking
FCPF7N60NT
Device
FCPF7N60NT
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 1mA, V GS = 0V, T C = 25 o C
600
-
-
V
Δ BV DSS
/ Δ T J
Breakdown Voltage Temperature
Coefficient
I D = 1mA, Referenced to
25 o C
-
0.6
-
V/ o C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V DS = 480V, V GS = 0V
V DS = 480V, V GS = 0V, T C = 125 o C
V GS = ±30V, V DS = 0V
-
-
-
-
-
-
10
100
±100
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 3.4A
V DS = 20V, I D = 3.4A
2.0
-
-
-
0.46
8.5
4.0
0.52
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff
Q g(tot)
Q gs
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 100V, V GS = 0V
f = 1MHz
V DS = 380V, V GS = 0V, f = 1MHz
V DS = 0V to 380V, V GS = 0V
V DS = 380V,I D = 3.4A
V GS = 10V
(Note 4)
Drain Open
-
-
-
-
-
-
-
-
-
719
30
2.1
17
91
17.8
3.2
6.0
2.5
960
40
3.2
-
-
35.6
6.3
11.9
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380V, I D = 3.4A
R G = 4.7 Ω
(Note 4)
-
-
-
-
12
6
35
12
24
22
80
24
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
6.8
20.4
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD =3.4A
V GS = 0V, I SD = 3.4A
dI F /dt = 100A/ μ s
-
-
-
-
211
1.8
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 12A, V DD = 50V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 36A, di/dt ≤ 200A/ μ s, V DD = 380V starting T J = 25 ° C.
4. Essentially independent of operating temperature.
?2012 Fairchild Semiconductor Corporation
FCPF7N60NT Rev. C2
2
www.fairchildsemi.com
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